Standard

Microstructure of interfaces in heterosystems. / Vasiliev, A. L.; Roddatis, V. V.; Presnyakov, M. Yu; Orekhov, A. S.; Lopatin, S.; Bondarenko, V. I.; Koval'chuk, M. V.

в: Nanotechnologies in Russia, Том 8, № 5-6, 05.2013, стр. 317-327.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Vasiliev, AL, Roddatis, VV, Presnyakov, MY, Orekhov, AS, Lopatin, S, Bondarenko, VI & Koval'chuk, MV 2013, 'Microstructure of interfaces in heterosystems', Nanotechnologies in Russia, Том. 8, № 5-6, стр. 317-327. https://doi.org/10.1134/S199507801303021X

APA

Vasiliev, A. L., Roddatis, V. V., Presnyakov, M. Y., Orekhov, A. S., Lopatin, S., Bondarenko, V. I., & Koval'chuk, M. V. (2013). Microstructure of interfaces in heterosystems. Nanotechnologies in Russia, 8(5-6), 317-327. https://doi.org/10.1134/S199507801303021X

Vancouver

Vasiliev AL, Roddatis VV, Presnyakov MY, Orekhov AS, Lopatin S, Bondarenko VI и пр. Microstructure of interfaces in heterosystems. Nanotechnologies in Russia. 2013 Май;8(5-6):317-327. https://doi.org/10.1134/S199507801303021X

Author

Vasiliev, A. L. ; Roddatis, V. V. ; Presnyakov, M. Yu ; Orekhov, A. S. ; Lopatin, S. ; Bondarenko, V. I. ; Koval'chuk, M. V. / Microstructure of interfaces in heterosystems. в: Nanotechnologies in Russia. 2013 ; Том 8, № 5-6. стр. 317-327.

BibTeX

@article{165e8931b070490d918894dc63aa175b,
title = "Microstructure of interfaces in heterosystems",
abstract = "The results of investigations into interfaces and thin films in heterostructures with the use of spherical-aberration-corrected transmission and scanning transmission electron microscopy (STEM) by applying supersensitive energy-dispersion X-ray microanalysis are presented. Using examples of heterostructures of various materials (Si/Ge, InGaAs/InAs, AlN/GaN, YBCO on various substrates and LuFe(Co)O3/YSZ), the possibility of determining the morphology and atomic structure of interfaces and mechanisms of the formation of layers is shown.",
author = "Vasiliev, {A. L.} and Roddatis, {V. V.} and Presnyakov, {M. Yu} and Orekhov, {A. S.} and S. Lopatin and Bondarenko, {V. I.} and Koval'chuk, {M. V.}",
year = "2013",
month = may,
doi = "10.1134/S199507801303021X",
language = "English",
volume = "8",
pages = "317--327",
journal = "Nanobiotechnology Reports",
issn = "2635-1676",
publisher = "Pleiades Publishing",
number = "5-6",

}

RIS

TY - JOUR

T1 - Microstructure of interfaces in heterosystems

AU - Vasiliev, A. L.

AU - Roddatis, V. V.

AU - Presnyakov, M. Yu

AU - Orekhov, A. S.

AU - Lopatin, S.

AU - Bondarenko, V. I.

AU - Koval'chuk, M. V.

PY - 2013/5

Y1 - 2013/5

N2 - The results of investigations into interfaces and thin films in heterostructures with the use of spherical-aberration-corrected transmission and scanning transmission electron microscopy (STEM) by applying supersensitive energy-dispersion X-ray microanalysis are presented. Using examples of heterostructures of various materials (Si/Ge, InGaAs/InAs, AlN/GaN, YBCO on various substrates and LuFe(Co)O3/YSZ), the possibility of determining the morphology and atomic structure of interfaces and mechanisms of the formation of layers is shown.

AB - The results of investigations into interfaces and thin films in heterostructures with the use of spherical-aberration-corrected transmission and scanning transmission electron microscopy (STEM) by applying supersensitive energy-dispersion X-ray microanalysis are presented. Using examples of heterostructures of various materials (Si/Ge, InGaAs/InAs, AlN/GaN, YBCO on various substrates and LuFe(Co)O3/YSZ), the possibility of determining the morphology and atomic structure of interfaces and mechanisms of the formation of layers is shown.

UR - http://www.scopus.com/inward/record.url?scp=84879703760&partnerID=8YFLogxK

U2 - 10.1134/S199507801303021X

DO - 10.1134/S199507801303021X

M3 - Article

AN - SCOPUS:84879703760

VL - 8

SP - 317

EP - 327

JO - Nanobiotechnology Reports

JF - Nanobiotechnology Reports

SN - 2635-1676

IS - 5-6

ER -

ID: 88210126