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Mechanisms of dislocation network formation in Si(001) hydrophilic bonded wafers. / Vdovin, V.; Vyvenko, O.; Ubyivovk, E.; Kononchuk, O.

в: Diffusion and Defect Data Pt.B: Solid State Phenomena, Том 178-179, 2011, стр. 253-258.

Результаты исследований: Научные публикации в периодических изданиях › статья

Harvard

Vdovin, V, Vyvenko, O, Ubyivovk, E & Kononchuk, O 2011, 'Mechanisms of dislocation network formation in Si(001) hydrophilic bonded wafers', Diffusion and Defect Data Pt.B: Solid State Phenomena, Том. 178-179, стр. 253-258. https://doi.org/DOI: 10.4028/www.scientific.net/SSP.178-179.253

APA

Vdovin, V., Vyvenko, O., Ubyivovk, E., & Kononchuk, O. (2011). Mechanisms of dislocation network formation in Si(001) hydrophilic bonded wafers. Diffusion and Defect Data Pt.B: Solid State Phenomena, 178-179, 253-258. https://doi.org/DOI: 10.4028/www.scientific.net/SSP.178-179.253

Vancouver

Vdovin V, Vyvenko O, Ubyivovk E, Kononchuk O. Mechanisms of dislocation network formation in Si(001) hydrophilic bonded wafers. Diffusion and Defect Data Pt.B: Solid State Phenomena. 2011;178-179:253-258. https://doi.org/DOI: 10.4028/www.scientific.net/SSP.178-179.253

Author

Vdovin, V. ; Vyvenko, O. ; Ubyivovk, E. ; Kononchuk, O. / Mechanisms of dislocation network formation in Si(001) hydrophilic bonded wafers. в: Diffusion and Defect Data Pt.B: Solid State Phenomena. 2011 ; Том 178-179. стр. 253-258.

BibTeX

@article{91674ab5043242a1b34541e98639e30e,
title = "Mechanisms of dislocation network formation in Si(001) hydrophilic bonded wafers",
abstract = "Structures of Si(001) hydrophilically bonded wafers have been studied by transmission electron microscopy. A model of three-fold nod generation during interaction of intersecting mixed and screw dislocations has been suggested and applied to analyze geometrical features of dislocation networks. Possible mechanisms of dislocation generation at the interface between Si bonded wafers are discussed. {\textcopyright} (2011) Trans Tech Publications, Switzerland.",
keywords = "Dislocation reactions, Screw dislocations, Silicon wafer bonding, Transmission electron microscopy",
author = "V. Vdovin and O. Vyvenko and E. Ubyivovk and O. Kononchuk",
year = "2011",
doi = "DOI: 10.4028/www.scientific.net/SSP.178-179.253",
language = "English",
volume = "178-179",
pages = "253--258",
journal = "Solid State Phenomena",
issn = "1012-0394",
publisher = "Scientific.net",

}

RIS

TY - JOUR

T1 - Mechanisms of dislocation network formation in Si(001) hydrophilic bonded wafers

AU - Vdovin, V.

AU - Vyvenko, O.

AU - Ubyivovk, E.

AU - Kononchuk, O.

PY - 2011

Y1 - 2011

N2 - Structures of Si(001) hydrophilically bonded wafers have been studied by transmission electron microscopy. A model of three-fold nod generation during interaction of intersecting mixed and screw dislocations has been suggested and applied to analyze geometrical features of dislocation networks. Possible mechanisms of dislocation generation at the interface between Si bonded wafers are discussed. © (2011) Trans Tech Publications, Switzerland.

AB - Structures of Si(001) hydrophilically bonded wafers have been studied by transmission electron microscopy. A model of three-fold nod generation during interaction of intersecting mixed and screw dislocations has been suggested and applied to analyze geometrical features of dislocation networks. Possible mechanisms of dislocation generation at the interface between Si bonded wafers are discussed. © (2011) Trans Tech Publications, Switzerland.

KW - Dislocation reactions

KW - Screw dislocations

KW - Silicon wafer bonding

KW - Transmission electron microscopy

U2 - DOI: 10.4028/www.scientific.net/SSP.178-179.253

DO - DOI: 10.4028/www.scientific.net/SSP.178-179.253

M3 - Article

VL - 178-179

SP - 253

EP - 258

JO - Solid State Phenomena

JF - Solid State Phenomena

SN - 1012-0394

ER -

ID: 5206363