Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Mechanism of stress induced leakage current in Si3 N4. / Gritsenko, V. A.; Gismatulin, A. A.; Baraban, A. P.; Chin, A.
в: Materials Research Express, Том 6, № 7, 076401, 07.2019.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Mechanism of stress induced leakage current in Si3 N4
AU - Gritsenko, V. A.
AU - Gismatulin, A. A.
AU - Baraban, A. P.
AU - Chin, A.
PY - 2019/7
Y1 - 2019/7
N2 - In this paper, the experimental current density versus electric field characteristics of Si 3 N 4 before and after the electrical field-induced stress were measured. It is shown that, the Frenkel model of Coulomb trap ionization, Hill-Adachi model of overlapping Coulomb traps, Makram-Ebeid and Lannoo multiphonon isolated trap ionization model do not describe the charge transport of Si 3 N 4 before and after the electrical field-induced stress. The Nasyrov-Gritsenko model of phonon assisted tunneling between traps quantitatively describes the hole transport mechanism in Si 3 N 4 before and after the induced stress at traps energies W t =1.6 eV and W opt =3.2 eV. The current leakage at different induced stresses in Si 3 N 4 is explained by the increase of trap concentration via the creation of Si-Si bonds, which are traps in Si 3 N 4 .
AB - In this paper, the experimental current density versus electric field characteristics of Si 3 N 4 before and after the electrical field-induced stress were measured. It is shown that, the Frenkel model of Coulomb trap ionization, Hill-Adachi model of overlapping Coulomb traps, Makram-Ebeid and Lannoo multiphonon isolated trap ionization model do not describe the charge transport of Si 3 N 4 before and after the electrical field-induced stress. The Nasyrov-Gritsenko model of phonon assisted tunneling between traps quantitatively describes the hole transport mechanism in Si 3 N 4 before and after the induced stress at traps energies W t =1.6 eV and W opt =3.2 eV. The current leakage at different induced stresses in Si 3 N 4 is explained by the increase of trap concentration via the creation of Si-Si bonds, which are traps in Si 3 N 4 .
KW - charge transport
KW - SILC
KW - traps
KW - SILICON-NITRIDE
KW - MEMORY
KW - RETENTION
KW - CHARGE-TRANSPORT
KW - CONDUCTION
KW - DEVICES
KW - MODEL
UR - http://www.scopus.com/inward/record.url?scp=85066028475&partnerID=8YFLogxK
UR - http://www.mendeley.com/research/mechanism-stress-induced-leakage-current-si-3-n-4
U2 - 10.1088/2053-1591/ab1223
DO - 10.1088/2053-1591/ab1223
M3 - Article
AN - SCOPUS:85066028475
VL - 6
JO - Materials Research Express
JF - Materials Research Express
SN - 2053-1591
IS - 7
M1 - 076401
ER -
ID: 41086664