Standard

Manifestation of the exchange interaction of electrons separated by a potential barrier in double quantum wells in the Kerr effect. / Degoev , M. M.; Afanasiev , M. M.; Kalevich , V. K.; Kavokin , K. V.; Kozyrev , N. V.; Karczewski , G.; Kusrayev , Yu. G.

в: Physics of the Solid State, Том 65, № 1, 12.03.2023, стр. 80-83.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

Harvard

Degoev , MM, Afanasiev , MM, Kalevich , VK, Kavokin , KV, Kozyrev , NV, Karczewski , G & Kusrayev , YG 2023, 'Manifestation of the exchange interaction of electrons separated by a potential barrier in double quantum wells in the Kerr effect', Physics of the Solid State, Том. 65, № 1, стр. 80-83. https://doi.org/10.21883/pss.2023.01.54978.478, https://doi.org/10.21883/PSS.2023.01.54978.478

APA

Degoev , M. M., Afanasiev , M. M., Kalevich , V. K., Kavokin , K. V., Kozyrev , N. V., Karczewski , G., & Kusrayev , Y. G. (2023). Manifestation of the exchange interaction of electrons separated by a potential barrier in double quantum wells in the Kerr effect. Physics of the Solid State, 65(1), 80-83. https://doi.org/10.21883/pss.2023.01.54978.478, https://doi.org/10.21883/PSS.2023.01.54978.478

Vancouver

Author

Degoev , M. M. ; Afanasiev , M. M. ; Kalevich , V. K. ; Kavokin , K. V. ; Kozyrev , N. V. ; Karczewski , G. ; Kusrayev , Yu. G. / Manifestation of the exchange interaction of electrons separated by a potential barrier in double quantum wells in the Kerr effect. в: Physics of the Solid State. 2023 ; Том 65, № 1. стр. 80-83.

BibTeX

@article{900342fe19844d84b4a880520916bc9d,
title = "Manifestation of the exchange interaction of electrons separated by a potential barrier in double quantum wells in the Kerr effect",
abstract = "In tunnel-coupled quantum wells of different widths, it was found that the spin dynamics arising from resonant pulsed optical pumping of an exciton in the narrow well includes the dynamics of electron spin polarization in the wide well, although the electron level in the wide well is 55 meV lower than the electron level in the narrow well. An analysis of the obtained results showed that the observed effect is caused by the exchange interaction of spin-polarized electrons in the wide well with exciton states in the narrow well. Keywords: semiconductor nanostructures, exchange interaction, Kerr effect.",
author = "Degoev, {M. M.} and Afanasiev, {M. M.} and Kalevich, {V. K.} and Kavokin, {K. V.} and Kozyrev, {N. V.} and G. Karczewski and Kusrayev, {Yu. G.}",
year = "2023",
month = mar,
day = "12",
doi = "10.21883/pss.2023.01.54978.478",
language = "English",
volume = "65",
pages = "80--83",
journal = "Physics of the Solid State",
issn = "1063-7834",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "1",

}

RIS

TY - JOUR

T1 - Manifestation of the exchange interaction of electrons separated by a potential barrier in double quantum wells in the Kerr effect

AU - Degoev , M. M.

AU - Afanasiev , M. M.

AU - Kalevich , V. K.

AU - Kavokin , K. V.

AU - Kozyrev , N. V.

AU - Karczewski , G.

AU - Kusrayev , Yu. G.

PY - 2023/3/12

Y1 - 2023/3/12

N2 - In tunnel-coupled quantum wells of different widths, it was found that the spin dynamics arising from resonant pulsed optical pumping of an exciton in the narrow well includes the dynamics of electron spin polarization in the wide well, although the electron level in the wide well is 55 meV lower than the electron level in the narrow well. An analysis of the obtained results showed that the observed effect is caused by the exchange interaction of spin-polarized electrons in the wide well with exciton states in the narrow well. Keywords: semiconductor nanostructures, exchange interaction, Kerr effect.

AB - In tunnel-coupled quantum wells of different widths, it was found that the spin dynamics arising from resonant pulsed optical pumping of an exciton in the narrow well includes the dynamics of electron spin polarization in the wide well, although the electron level in the wide well is 55 meV lower than the electron level in the narrow well. An analysis of the obtained results showed that the observed effect is caused by the exchange interaction of spin-polarized electrons in the wide well with exciton states in the narrow well. Keywords: semiconductor nanostructures, exchange interaction, Kerr effect.

UR - https://www.mendeley.com/catalogue/6a89b39a-c783-3465-b86f-6f4d6d521b59/

U2 - 10.21883/pss.2023.01.54978.478

DO - 10.21883/pss.2023.01.54978.478

M3 - Article

VL - 65

SP - 80

EP - 83

JO - Physics of the Solid State

JF - Physics of the Solid State

SN - 1063-7834

IS - 1

ER -

ID: 106788160