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Magnetic proximity effect at the three-dimensional topological insulator/magnetic insulator interface. / Eremeev, S. V.; Men'Shov, V. N.; Tugushev, V. V.; Echenique, P. M.; Chulkov, E. V.

в: Physical Review B - Condensed Matter and Materials Physics, Том 88, № 14, 144430, 31.10.2013.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Eremeev, SV, Men'Shov, VN, Tugushev, VV, Echenique, PM & Chulkov, EV 2013, 'Magnetic proximity effect at the three-dimensional topological insulator/magnetic insulator interface', Physical Review B - Condensed Matter and Materials Physics, Том. 88, № 14, 144430. https://doi.org/10.1103/PhysRevB.88.144430

APA

Eremeev, S. V., Men'Shov, V. N., Tugushev, V. V., Echenique, P. M., & Chulkov, E. V. (2013). Magnetic proximity effect at the three-dimensional topological insulator/magnetic insulator interface. Physical Review B - Condensed Matter and Materials Physics, 88(14), [144430]. https://doi.org/10.1103/PhysRevB.88.144430

Vancouver

Eremeev SV, Men'Shov VN, Tugushev VV, Echenique PM, Chulkov EV. Magnetic proximity effect at the three-dimensional topological insulator/magnetic insulator interface. Physical Review B - Condensed Matter and Materials Physics. 2013 Окт. 31;88(14). 144430. https://doi.org/10.1103/PhysRevB.88.144430

Author

Eremeev, S. V. ; Men'Shov, V. N. ; Tugushev, V. V. ; Echenique, P. M. ; Chulkov, E. V. / Magnetic proximity effect at the three-dimensional topological insulator/magnetic insulator interface. в: Physical Review B - Condensed Matter and Materials Physics. 2013 ; Том 88, № 14.

BibTeX

@article{0ecfbaeaf7794f39b680e348fafa956a,
title = "Magnetic proximity effect at the three-dimensional topological insulator/magnetic insulator interface",
abstract = "The magnetic proximity effect is a fundamental feature of heterostructures composed of layers of topological insulators and magnetic materials since it underlies many potential applications in devices with novel quantum functionality. Within density functional theory we study magnetic proximity effect at the three-dimensional topological insulator/magnetic insulator (TI/MI) interface in the Bi2Se3/MnSe(111) system as an example. We demonstrate that a gapped ordinary bound state caused by the interface potential arises in the immediate region of the interface. The gapped topological Dirac state also arises in the system owing to relocation to deeper atomic layers of topological insulator. The gap in the Dirac cone originates from an overlapping of the topological and ordinary interfacial states. This result being also corroborated by the analytic model, is a key aspect of the magnetic proximity effect mechanism in the TI/MI structures.",
author = "Eremeev, {S. V.} and Men'Shov, {V. N.} and Tugushev, {V. V.} and Echenique, {P. M.} and Chulkov, {E. V.}",
year = "2013",
month = oct,
day = "31",
doi = "10.1103/PhysRevB.88.144430",
language = "English",
volume = "88",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "14",

}

RIS

TY - JOUR

T1 - Magnetic proximity effect at the three-dimensional topological insulator/magnetic insulator interface

AU - Eremeev, S. V.

AU - Men'Shov, V. N.

AU - Tugushev, V. V.

AU - Echenique, P. M.

AU - Chulkov, E. V.

PY - 2013/10/31

Y1 - 2013/10/31

N2 - The magnetic proximity effect is a fundamental feature of heterostructures composed of layers of topological insulators and magnetic materials since it underlies many potential applications in devices with novel quantum functionality. Within density functional theory we study magnetic proximity effect at the three-dimensional topological insulator/magnetic insulator (TI/MI) interface in the Bi2Se3/MnSe(111) system as an example. We demonstrate that a gapped ordinary bound state caused by the interface potential arises in the immediate region of the interface. The gapped topological Dirac state also arises in the system owing to relocation to deeper atomic layers of topological insulator. The gap in the Dirac cone originates from an overlapping of the topological and ordinary interfacial states. This result being also corroborated by the analytic model, is a key aspect of the magnetic proximity effect mechanism in the TI/MI structures.

AB - The magnetic proximity effect is a fundamental feature of heterostructures composed of layers of topological insulators and magnetic materials since it underlies many potential applications in devices with novel quantum functionality. Within density functional theory we study magnetic proximity effect at the three-dimensional topological insulator/magnetic insulator (TI/MI) interface in the Bi2Se3/MnSe(111) system as an example. We demonstrate that a gapped ordinary bound state caused by the interface potential arises in the immediate region of the interface. The gapped topological Dirac state also arises in the system owing to relocation to deeper atomic layers of topological insulator. The gap in the Dirac cone originates from an overlapping of the topological and ordinary interfacial states. This result being also corroborated by the analytic model, is a key aspect of the magnetic proximity effect mechanism in the TI/MI structures.

UR - http://www.scopus.com/inward/record.url?scp=84887031360&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.88.144430

DO - 10.1103/PhysRevB.88.144430

M3 - Article

AN - SCOPUS:84887031360

VL - 88

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 14

M1 - 144430

ER -

ID: 100858791