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Magnetic field induced valence band mixing in [111] grown semiconductor quantum dots. / Durnev, M. V.; Glazov, M. M.; Ivchenko, E. L.; Jo, M.; Mano, T.; Kuroda, T.; Sakoda, K.; Kunz, S.; Sallen, G.; Bouet, L.; Marie, X.; Lagarde, D.; Amand, T.; Urbaszek, B.

в: Physical Review B - Condensed Matter and Materials Physics, Том 87, № 8, 085315, 22.02.2013.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Durnev, MV, Glazov, MM, Ivchenko, EL, Jo, M, Mano, T, Kuroda, T, Sakoda, K, Kunz, S, Sallen, G, Bouet, L, Marie, X, Lagarde, D, Amand, T & Urbaszek, B 2013, 'Magnetic field induced valence band mixing in [111] grown semiconductor quantum dots', Physical Review B - Condensed Matter and Materials Physics, Том. 87, № 8, 085315. https://doi.org/10.1103/PhysRevB.87.085315

APA

Durnev, M. V., Glazov, M. M., Ivchenko, E. L., Jo, M., Mano, T., Kuroda, T., Sakoda, K., Kunz, S., Sallen, G., Bouet, L., Marie, X., Lagarde, D., Amand, T., & Urbaszek, B. (2013). Magnetic field induced valence band mixing in [111] grown semiconductor quantum dots. Physical Review B - Condensed Matter and Materials Physics, 87(8), [085315]. https://doi.org/10.1103/PhysRevB.87.085315

Vancouver

Durnev MV, Glazov MM, Ivchenko EL, Jo M, Mano T, Kuroda T и пр. Magnetic field induced valence band mixing in [111] grown semiconductor quantum dots. Physical Review B - Condensed Matter and Materials Physics. 2013 Февр. 22;87(8). 085315. https://doi.org/10.1103/PhysRevB.87.085315

Author

Durnev, M. V. ; Glazov, M. M. ; Ivchenko, E. L. ; Jo, M. ; Mano, T. ; Kuroda, T. ; Sakoda, K. ; Kunz, S. ; Sallen, G. ; Bouet, L. ; Marie, X. ; Lagarde, D. ; Amand, T. ; Urbaszek, B. / Magnetic field induced valence band mixing in [111] grown semiconductor quantum dots. в: Physical Review B - Condensed Matter and Materials Physics. 2013 ; Том 87, № 8.

BibTeX

@article{2366277dd0af44b98e00ed0d2780295c,
title = "Magnetic field induced valence band mixing in [111] grown semiconductor quantum dots",
abstract = "We present a microscopic theory of the magnetic field induced mixing of heavy-hole states ±3/2 in GaAs droplet dots grown on (111)A Ga-rich surfaces. The proposed theoretical model takes into account the striking dot shape with trigonal symmetry revealed in atomic force microscopy. Our calculations of the hole states are carried out within the Luttinger Hamiltonian formalism, supplemented with allowance for the triangularity of the confining potential. They are in quantitative agreement with the experimentally observed polarization selection rules, emission line intensities and energy splittings in both longitudinal and transverse magnetic fields for neutral and charged excitons in all measured single dots.",
author = "Durnev, {M. V.} and Glazov, {M. M.} and Ivchenko, {E. L.} and M. Jo and T. Mano and T. Kuroda and K. Sakoda and S. Kunz and G. Sallen and L. Bouet and X. Marie and D. Lagarde and T. Amand and B. Urbaszek",
year = "2013",
month = feb,
day = "22",
doi = "10.1103/PhysRevB.87.085315",
language = "English",
volume = "87",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "8",

}

RIS

TY - JOUR

T1 - Magnetic field induced valence band mixing in [111] grown semiconductor quantum dots

AU - Durnev, M. V.

AU - Glazov, M. M.

AU - Ivchenko, E. L.

AU - Jo, M.

AU - Mano, T.

AU - Kuroda, T.

AU - Sakoda, K.

AU - Kunz, S.

AU - Sallen, G.

AU - Bouet, L.

AU - Marie, X.

AU - Lagarde, D.

AU - Amand, T.

AU - Urbaszek, B.

PY - 2013/2/22

Y1 - 2013/2/22

N2 - We present a microscopic theory of the magnetic field induced mixing of heavy-hole states ±3/2 in GaAs droplet dots grown on (111)A Ga-rich surfaces. The proposed theoretical model takes into account the striking dot shape with trigonal symmetry revealed in atomic force microscopy. Our calculations of the hole states are carried out within the Luttinger Hamiltonian formalism, supplemented with allowance for the triangularity of the confining potential. They are in quantitative agreement with the experimentally observed polarization selection rules, emission line intensities and energy splittings in both longitudinal and transverse magnetic fields for neutral and charged excitons in all measured single dots.

AB - We present a microscopic theory of the magnetic field induced mixing of heavy-hole states ±3/2 in GaAs droplet dots grown on (111)A Ga-rich surfaces. The proposed theoretical model takes into account the striking dot shape with trigonal symmetry revealed in atomic force microscopy. Our calculations of the hole states are carried out within the Luttinger Hamiltonian formalism, supplemented with allowance for the triangularity of the confining potential. They are in quantitative agreement with the experimentally observed polarization selection rules, emission line intensities and energy splittings in both longitudinal and transverse magnetic fields for neutral and charged excitons in all measured single dots.

UR - http://www.scopus.com/inward/record.url?scp=84874518015&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.87.085315

DO - 10.1103/PhysRevB.87.085315

M3 - Article

AN - SCOPUS:84874518015

VL - 87

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 8

M1 - 085315

ER -

ID: 36371237