TY - JOUR

T1 - Luminescence of CdS crystals due to near-surface potential fluctuations

AU - Batyrev, A.S.

AU - Bisengaliev, R.A.

AU - Novikov, B.V.

AU - Sum'Yanova, E.V.

PY - 2013

Y1 - 2013

N2 - The nature of the wide emission band observed in the low-temperature (T ≤ 60 K) near-edge photoluminescence spectra of CdS crystals placed in water and irradiated by a He-Cd laser has been investigated. The spectral and temporal characteristics of the band and its dependence on temperature, excitation intensity, and transverse electric field are considered. The relationship between the band and the radiative recombination of carriers localized on near-surface potential fluctuations, which are due to the defect-forming character of the joint effect of laser irradiation and water on near-surface layer of semiconductor is grounded. © 2013 Pleiades Publishing, Ltd.

AB - The nature of the wide emission band observed in the low-temperature (T ≤ 60 K) near-edge photoluminescence spectra of CdS crystals placed in water and irradiated by a He-Cd laser has been investigated. The spectral and temporal characteristics of the band and its dependence on temperature, excitation intensity, and transverse electric field are considered. The relationship between the band and the radiative recombination of carriers localized on near-surface potential fluctuations, which are due to the defect-forming character of the joint effect of laser irradiation and water on near-surface layer of semiconductor is grounded. © 2013 Pleiades Publishing, Ltd.

U2 - 10.1134/S0030400X13020057

DO - 10.1134/S0030400X13020057

M3 - Article

SP - 225

EP - 229

JO - OPTICS AND SPECTROSCOPY

JF - OPTICS AND SPECTROSCOPY

SN - 0030-400X

IS - 2

ER -