TY - JOUR

T1 - Long term hole spin memory in the resonantly amplified spin coherence of InGaAs/GaAs quantum well electrons

AU - Yugova, I. A.

AU - Sokolova, A.A.

AU - Yakovlev, D.R.

AU - Greilich, A.

AU - Reuter, D.

AU - Wieck, A.D.

AU - Bayer, M.

PY - 2009

Y1 - 2009

N2 - Pulsed optical excitation of the negatively charged trion has been used to generate electron spin coherence in an n-doped (In,Ga)As/GaAs quantum well. The coherence is monitored by resonant spin amplification detected at times exceeding the trion lifetime by 2 orders of magnitude. Still, even then signatures of the hole spin dynamics in the trion complex are imprinted in the signal leading to an unusual batlike shape of the magnetic field dispersion of spin amplification. From this shape information about the spin relaxation of both electrons and holes can be derived.

AB - Pulsed optical excitation of the negatively charged trion has been used to generate electron spin coherence in an n-doped (In,Ga)As/GaAs quantum well. The coherence is monitored by resonant spin amplification detected at times exceeding the trion lifetime by 2 orders of magnitude. Still, even then signatures of the hole spin dynamics in the trion complex are imprinted in the signal leading to an unusual batlike shape of the magnetic field dispersion of spin amplification. From this shape information about the spin relaxation of both electrons and holes can be derived.

U2 - 10.1103/PhysRevLett.102.167402

DO - 10.1103/PhysRevLett.102.167402

M3 - статья

VL - 102

SP - 167402_1-4

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 16

ER -