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Long coherent dynamics of localized excitons in (In,Ga)N/GaN quantum wells. / Poltavtsev, S. V.; Solovev, I. A.; Akimov, I. A.; Chaldyshev, V. V.; Lundin, W. V.; Sakharov, A. V.; Tsatsulnikov, A. F.; Yakovlev, D. R.; Bayer, M.
в: Physical Review B-Condensed Matter, Том 98, № 19, 195315, 29.11.2018, стр. 1-6.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Long coherent dynamics of localized excitons in (In,Ga)N/GaN quantum wells
AU - Poltavtsev, S. V.
AU - Solovev, I. A.
AU - Akimov, I. A.
AU - Chaldyshev, V. V.
AU - Lundin, W. V.
AU - Sakharov, A. V.
AU - Tsatsulnikov, A. F.
AU - Yakovlev, D. R.
AU - Bayer, M.
N1 - Funding Information: The authors thank S. V. Goupalov for helpful discussions. The authors acknowledge the Deutsche Forschungsgemeinschaft (DFG) for financial support through the Collaborative Research Centre TRR 142 (Project No. A02) and the International Collaborative Research Centre 160 (Project No. A3). I.A.S. and S.V.P. thank the Russian Foundation for Basic Research (RFBR) for partial financial support of their work (Research Grant No. 15-52-12016 NNIO_a) and acknowledge St. Petersburg State University for the Research Grant No. 11.34.2.2012. I.A.S. thanks RFBR for the Research Grant No. 18-32-00684 mol_a. Publisher Copyright: © 2018 American Physical Society. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.
PY - 2018/11/29
Y1 - 2018/11/29
N2 - We study the coherent dynamics of localized excitons in 100 periods of 2.5-nm-thick (In,Ga)N/GaN quantum wells with 7.5% indium concentration, measured with spectroscopic resolution through two-pulse and three-pulse photon echoes at the temperature of 1.5 K. A long-lived coherent exciton dynamics is observed in the (In,Ga)N quantum wells: When the laser photon energy is tuned across the 43-meV-wide inhomogeneously broadened resonance line, the coherence time T2 varies between 45 and 255 ps, increasing with stronger exciton localization. The corresponding narrow homogeneous linewidths ranging from 5.2 to 29μeV as well as the relatively weak exciton-phonon interaction (0.7μeV/K) confirm a strong, quantum-dot-like exciton localization in a static disordered potential inside the (In,Ga)N quantum well layers.
AB - We study the coherent dynamics of localized excitons in 100 periods of 2.5-nm-thick (In,Ga)N/GaN quantum wells with 7.5% indium concentration, measured with spectroscopic resolution through two-pulse and three-pulse photon echoes at the temperature of 1.5 K. A long-lived coherent exciton dynamics is observed in the (In,Ga)N quantum wells: When the laser photon energy is tuned across the 43-meV-wide inhomogeneously broadened resonance line, the coherence time T2 varies between 45 and 255 ps, increasing with stronger exciton localization. The corresponding narrow homogeneous linewidths ranging from 5.2 to 29μeV as well as the relatively weak exciton-phonon interaction (0.7μeV/K) confirm a strong, quantum-dot-like exciton localization in a static disordered potential inside the (In,Ga)N quantum well layers.
KW - фотонное эхо, экситоны, квантовые ямы
UR - http://www.scopus.com/inward/record.url?scp=85057419732&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.98.195315
DO - 10.1103/PhysRevB.98.195315
M3 - Article
AN - SCOPUS:85057419732
VL - 98
SP - 1
EP - 6
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 1098-0121
IS - 19
M1 - 195315
ER -
ID: 36038296