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Limitations in the tunability of the spin resonance of 2D electrons in Si by an electric current. / Wilamowski, Z.; Malissa, H.; Glazov, M.; Jantsch, W.

в: Acta Physica Polonica A, Том 112, № 2, 01.01.2007, стр. 375-379.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

Harvard

Wilamowski, Z, Malissa, H, Glazov, M & Jantsch, W 2007, 'Limitations in the tunability of the spin resonance of 2D electrons in Si by an electric current', Acta Physica Polonica A, Том. 112, № 2, стр. 375-379. https://doi.org/10.12693/APhysPolA.112.375

APA

Vancouver

Author

Wilamowski, Z. ; Malissa, H. ; Glazov, M. ; Jantsch, W. / Limitations in the tunability of the spin resonance of 2D electrons in Si by an electric current. в: Acta Physica Polonica A. 2007 ; Том 112, № 2. стр. 375-379.

BibTeX

@article{b5a0d2a0b6a84c69ab112d28f86f9320,
title = "Limitations in the tunability of the spin resonance of 2D electrons in Si by an electric current",
abstract = "We analyse the recently observed effect of an in-plane electric current through a Si quantum well on the conduction electron spin resonance. We find that the ratio of resonance shift and current density is independent of temperature and dissipation processes, but the channel current is reduced due to a parallel electric channel in heavily modulation doped samples. The inhomogeneous current distribution results in some broadening of the ESR line width. In high mobility Si/SiGe layers the current induced increase in the electron temperature is considerably larger than the increase in the lattice temperature. The signal amplitude scales with the square of electron mobility.",
author = "Z. Wilamowski and H. Malissa and M. Glazov and W. Jantsch",
year = "2007",
month = jan,
day = "1",
doi = "10.12693/APhysPolA.112.375",
language = "English",
volume = "112",
pages = "375--379",
journal = "Acta Physica Polonica A",
issn = "0587-4246",
publisher = "Polish Academy of Sciences Publishing House",
number = "2",

}

RIS

TY - JOUR

T1 - Limitations in the tunability of the spin resonance of 2D electrons in Si by an electric current

AU - Wilamowski, Z.

AU - Malissa, H.

AU - Glazov, M.

AU - Jantsch, W.

PY - 2007/1/1

Y1 - 2007/1/1

N2 - We analyse the recently observed effect of an in-plane electric current through a Si quantum well on the conduction electron spin resonance. We find that the ratio of resonance shift and current density is independent of temperature and dissipation processes, but the channel current is reduced due to a parallel electric channel in heavily modulation doped samples. The inhomogeneous current distribution results in some broadening of the ESR line width. In high mobility Si/SiGe layers the current induced increase in the electron temperature is considerably larger than the increase in the lattice temperature. The signal amplitude scales with the square of electron mobility.

AB - We analyse the recently observed effect of an in-plane electric current through a Si quantum well on the conduction electron spin resonance. We find that the ratio of resonance shift and current density is independent of temperature and dissipation processes, but the channel current is reduced due to a parallel electric channel in heavily modulation doped samples. The inhomogeneous current distribution results in some broadening of the ESR line width. In high mobility Si/SiGe layers the current induced increase in the electron temperature is considerably larger than the increase in the lattice temperature. The signal amplitude scales with the square of electron mobility.

UR - http://www.scopus.com/inward/record.url?scp=35248821095&partnerID=8YFLogxK

U2 - 10.12693/APhysPolA.112.375

DO - 10.12693/APhysPolA.112.375

M3 - Article

AN - SCOPUS:35248821095

VL - 112

SP - 375

EP - 379

JO - Acta Physica Polonica A

JF - Acta Physica Polonica A

SN - 0587-4246

IS - 2

ER -

ID: 36556167