Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Joint Analysis of Cathodoluminescence and Electroluminescence of SiO2 Layers on Silicon. / Барабан, Александр Петрович; Дмитриев, Валентин Александрович; Габис, Игорь Евгеньевич; Петров, Юрий Владимирович; Прокофьев, В.А.
в: OPTICS AND SPECTROSCOPY, Том 130, № 4, 04.2022, стр. 239-243.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
}
TY - JOUR
T1 - Joint Analysis of Cathodoluminescence and Electroluminescence of SiO2 Layers on Silicon
AU - Барабан, Александр Петрович
AU - Дмитриев, Валентин Александрович
AU - Габис, Игорь Евгеньевич
AU - Петров, Юрий Владимирович
AU - Прокофьев, В.А
N1 - Publisher Copyright: © 2022, Pleiades Publishing, Ltd.
PY - 2022/4
Y1 - 2022/4
N2 - Abstract: The possibility of obtaining additional information on the properties of Si–SiO 2 structures from joint analysis of the electroluminescence and cathodoluminescence spectra in the spectral range of 250–800 nm is shown. It is found that the concentration of luminescent centers responsible for the 2.2-eV band is independent from the final thickness of the oxide layer and the centers are uniformly distributed over the SiO 2 thickness. It is shown that the luminescent centers responsible for the 4.2-eV band are characterized by a nonuniform distribution and form mainly in the outer part of the oxide layer (~30 nm) in amount proportional to the square root of the thermal oxidation time, which makes it possible to relate their formation to diffusion of oxidant components.
AB - Abstract: The possibility of obtaining additional information on the properties of Si–SiO 2 structures from joint analysis of the electroluminescence and cathodoluminescence spectra in the spectral range of 250–800 nm is shown. It is found that the concentration of luminescent centers responsible for the 2.2-eV band is independent from the final thickness of the oxide layer and the centers are uniformly distributed over the SiO 2 thickness. It is shown that the luminescent centers responsible for the 4.2-eV band are characterized by a nonuniform distribution and form mainly in the outer part of the oxide layer (~30 nm) in amount proportional to the square root of the thermal oxidation time, which makes it possible to relate their formation to diffusion of oxidant components.
KW - cathodoluminescence
KW - electroluminescence
KW - luminescent centers
KW - spectral distribution
UR - http://www.scopus.com/inward/record.url?scp=85137466263&partnerID=8YFLogxK
UR - https://www.mendeley.com/catalogue/d8bd6856-92b1-3189-9013-258e25fc6d3f/
U2 - 10.1134/s0030400x22040026
DO - 10.1134/s0030400x22040026
M3 - Article
VL - 130
SP - 239
EP - 243
JO - OPTICS AND SPECTROSCOPY
JF - OPTICS AND SPECTROSCOPY
SN - 0030-400X
IS - 4
ER -
ID: 100226481