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INVESTIGATION OF TRANSIENT PROCESSES IN THE ESTABLISHMENT OF FIELD-ELECTRON EMISSION FROM GERMANIUM. / El Nimr, M. K.; Egorov, N. V.; Fursei, G. N.

в: Sov Phys Solid State, Том 17, № 1, 01.01.1975, стр. 171-172.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

Harvard

El Nimr, MK, Egorov, NV & Fursei, GN 1975, 'INVESTIGATION OF TRANSIENT PROCESSES IN THE ESTABLISHMENT OF FIELD-ELECTRON EMISSION FROM GERMANIUM.', Sov Phys Solid State, Том. 17, № 1, стр. 171-172.

APA

El Nimr, M. K., Egorov, N. V., & Fursei, G. N. (1975). INVESTIGATION OF TRANSIENT PROCESSES IN THE ESTABLISHMENT OF FIELD-ELECTRON EMISSION FROM GERMANIUM. Sov Phys Solid State, 17(1), 171-172.

Vancouver

El Nimr MK, Egorov NV, Fursei GN. INVESTIGATION OF TRANSIENT PROCESSES IN THE ESTABLISHMENT OF FIELD-ELECTRON EMISSION FROM GERMANIUM. Sov Phys Solid State. 1975 Янв. 1;17(1):171-172.

Author

El Nimr, M. K. ; Egorov, N. V. ; Fursei, G. N. / INVESTIGATION OF TRANSIENT PROCESSES IN THE ESTABLISHMENT OF FIELD-ELECTRON EMISSION FROM GERMANIUM. в: Sov Phys Solid State. 1975 ; Том 17, № 1. стр. 171-172.

BibTeX

@article{d7a1ecf2264049789d8f88aa7353d868,
title = "INVESTIGATION OF TRANSIENT PROCESSES IN THE ESTABLISHMENT OF FIELD-ELECTRON EMISSION FROM GERMANIUM.",
abstract = "An investigation was made of transient processes occurring in the establishment of steady-state field-electron emission from germanium. These processes are due to the finite time needed for changes in the space-change region after the application of an electric field. A residual relaxation effect was observed. This effect occurred in fields corresponding to parts II and III of the current - voltage characteristic. The effect depended strongly on the anode voltage and on the magnitude and sign of a steady-state bias applied in advance of the pulses. The observations are explained by postulating charging of the trapping centers located in the space-charge region of the semiconductor field emitter.",
author = "{El Nimr}, {M. K.} and Egorov, {N. V.} and Fursei, {G. N.}",
year = "1975",
month = jan,
day = "1",
language = "English",
volume = "17",
pages = "171--172",
journal = "Physics of the Solid State",
issn = "1063-7834",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "1",

}

RIS

TY - JOUR

T1 - INVESTIGATION OF TRANSIENT PROCESSES IN THE ESTABLISHMENT OF FIELD-ELECTRON EMISSION FROM GERMANIUM.

AU - El Nimr, M. K.

AU - Egorov, N. V.

AU - Fursei, G. N.

PY - 1975/1/1

Y1 - 1975/1/1

N2 - An investigation was made of transient processes occurring in the establishment of steady-state field-electron emission from germanium. These processes are due to the finite time needed for changes in the space-change region after the application of an electric field. A residual relaxation effect was observed. This effect occurred in fields corresponding to parts II and III of the current - voltage characteristic. The effect depended strongly on the anode voltage and on the magnitude and sign of a steady-state bias applied in advance of the pulses. The observations are explained by postulating charging of the trapping centers located in the space-charge region of the semiconductor field emitter.

AB - An investigation was made of transient processes occurring in the establishment of steady-state field-electron emission from germanium. These processes are due to the finite time needed for changes in the space-change region after the application of an electric field. A residual relaxation effect was observed. This effect occurred in fields corresponding to parts II and III of the current - voltage characteristic. The effect depended strongly on the anode voltage and on the magnitude and sign of a steady-state bias applied in advance of the pulses. The observations are explained by postulating charging of the trapping centers located in the space-charge region of the semiconductor field emitter.

UR - http://www.scopus.com/inward/record.url?scp=0016532341&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0016532341

VL - 17

SP - 171

EP - 172

JO - Physics of the Solid State

JF - Physics of the Solid State

SN - 1063-7834

IS - 1

ER -

ID: 49547847