Standard

Investigation of the influence of the state of the surface on the emission properties of semiconductor photo-field electron emitters. / Egorov, N. V.; Tolstyakov, V. R.

в: Surface Investigation X-Ray, Synchrotron and Neutron Techniques, Том 12, № 8, 1997, стр. 893-903.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Egorov, NV & Tolstyakov, VR 1997, 'Investigation of the influence of the state of the surface on the emission properties of semiconductor photo-field electron emitters', Surface Investigation X-Ray, Synchrotron and Neutron Techniques, Том. 12, № 8, стр. 893-903.

APA

Egorov, N. V., & Tolstyakov, V. R. (1997). Investigation of the influence of the state of the surface on the emission properties of semiconductor photo-field electron emitters. Surface Investigation X-Ray, Synchrotron and Neutron Techniques, 12(8), 893-903.

Vancouver

Egorov NV, Tolstyakov VR. Investigation of the influence of the state of the surface on the emission properties of semiconductor photo-field electron emitters. Surface Investigation X-Ray, Synchrotron and Neutron Techniques. 1997;12(8):893-903.

Author

Egorov, N. V. ; Tolstyakov, V. R. / Investigation of the influence of the state of the surface on the emission properties of semiconductor photo-field electron emitters. в: Surface Investigation X-Ray, Synchrotron and Neutron Techniques. 1997 ; Том 12, № 8. стр. 893-903.

BibTeX

@article{5a29cab6b0a24701aaa76ce2a23184fd,
title = "Investigation of the influence of the state of the surface on the emission properties of semiconductor photo-field electron emitters",
abstract = "The photo-field electron emitters (PFEEs) have been investigated by field-emission microscopy, low energy electron diffraction, Auger electron spectroscopy and Hall-effect complimentary techniques. We have found that the complete voltage-current characteristic (VCC) is nonlinear and has eight characteristic regions of current change with bias increase. The shape and the number of these regions depend highly on the state of the surface, its electrophysical parameters, and the time of the VCC measurement. An adequate model of PFEEs for the experimental results interpretation is proposed.",
author = "Egorov, {N. V.} and Tolstyakov, {V. R.}",
year = "1997",
language = "English",
volume = "12",
pages = "893--903",
journal = "ПОВЕРХНОСТЬ. РЕНТГЕНОВСКИЕ, СИНХРОТРОННЫЕ И НЕЙТРОННЫЕ ИССЛЕДОВАНИЯ",
issn = "1027-4510",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "8",

}

RIS

TY - JOUR

T1 - Investigation of the influence of the state of the surface on the emission properties of semiconductor photo-field electron emitters

AU - Egorov, N. V.

AU - Tolstyakov, V. R.

PY - 1997

Y1 - 1997

N2 - The photo-field electron emitters (PFEEs) have been investigated by field-emission microscopy, low energy electron diffraction, Auger electron spectroscopy and Hall-effect complimentary techniques. We have found that the complete voltage-current characteristic (VCC) is nonlinear and has eight characteristic regions of current change with bias increase. The shape and the number of these regions depend highly on the state of the surface, its electrophysical parameters, and the time of the VCC measurement. An adequate model of PFEEs for the experimental results interpretation is proposed.

AB - The photo-field electron emitters (PFEEs) have been investigated by field-emission microscopy, low energy electron diffraction, Auger electron spectroscopy and Hall-effect complimentary techniques. We have found that the complete voltage-current characteristic (VCC) is nonlinear and has eight characteristic regions of current change with bias increase. The shape and the number of these regions depend highly on the state of the surface, its electrophysical parameters, and the time of the VCC measurement. An adequate model of PFEEs for the experimental results interpretation is proposed.

UR - http://www.scopus.com/inward/record.url?scp=0031347982&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0031347982

VL - 12

SP - 893

EP - 903

JO - ПОВЕРХНОСТЬ. РЕНТГЕНОВСКИЕ, СИНХРОТРОННЫЕ И НЕЙТРОННЫЕ ИССЛЕДОВАНИЯ

JF - ПОВЕРХНОСТЬ. РЕНТГЕНОВСКИЕ, СИНХРОТРОННЫЕ И НЕЙТРОННЫЕ ИССЛЕДОВАНИЯ

SN - 1027-4510

IS - 8

ER -

ID: 88989546