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Invalidity of Band-Gap Engineering Concept for Bi3+ Heterovalent Doping in CsPbBr3 Halide Perovskite. / Lozhkina, Olga A.; Murashkina, Anna A.; Shilovskikh, Vladimir V.; Kapitonov, Yury V.; Ryabchuk, Vladimir K.; Emeline, Alexei V.; Miyasaka, Tsutomu.

в: Journal of Physical Chemistry Letters, Том 9, № 18, 20.09.2018, стр. 5408-5411.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Lozhkina, OA, Murashkina, AA, Shilovskikh, VV, Kapitonov, YV, Ryabchuk, VK, Emeline, AV & Miyasaka, T 2018, 'Invalidity of Band-Gap Engineering Concept for Bi3+ Heterovalent Doping in CsPbBr3 Halide Perovskite', Journal of Physical Chemistry Letters, Том. 9, № 18, стр. 5408-5411. https://doi.org/10.1021/acs.jpclett.8b02178

APA

Lozhkina, O. A., Murashkina, A. A., Shilovskikh, V. V., Kapitonov, Y. V., Ryabchuk, V. K., Emeline, A. V., & Miyasaka, T. (2018). Invalidity of Band-Gap Engineering Concept for Bi3+ Heterovalent Doping in CsPbBr3 Halide Perovskite. Journal of Physical Chemistry Letters, 9(18), 5408-5411. https://doi.org/10.1021/acs.jpclett.8b02178

Vancouver

Lozhkina OA, Murashkina AA, Shilovskikh VV, Kapitonov YV, Ryabchuk VK, Emeline AV и пр. Invalidity of Band-Gap Engineering Concept for Bi3+ Heterovalent Doping in CsPbBr3 Halide Perovskite. Journal of Physical Chemistry Letters. 2018 Сент. 20;9(18):5408-5411. https://doi.org/10.1021/acs.jpclett.8b02178

Author

Lozhkina, Olga A. ; Murashkina, Anna A. ; Shilovskikh, Vladimir V. ; Kapitonov, Yury V. ; Ryabchuk, Vladimir K. ; Emeline, Alexei V. ; Miyasaka, Tsutomu. / Invalidity of Band-Gap Engineering Concept for Bi3+ Heterovalent Doping in CsPbBr3 Halide Perovskite. в: Journal of Physical Chemistry Letters. 2018 ; Том 9, № 18. стр. 5408-5411.

BibTeX

@article{9e43a6142e334f11b9d7d17c7515c90b,
title = "Invalidity of Band-Gap Engineering Concept for Bi3+ Heterovalent Doping in CsPbBr3 Halide Perovskite",
abstract = "Heterovalent CsPbBr3 doping with Bi results in a significant red shift of the optical absorption of both single-crystal and powdered samples. The results of low-temperature (3.6 K) photoluminescence studies of perovskite single crystals indicate that the position of the excitonic luminescence peak remains unaffected by Bi doping that, in turn, infers that the band gap of Bi-doped perovskite is not changed as well. The position and state density distribution of the valence band and Fermi level of single-crystal perovskites were determined by another direct method of ultraviolet photoelectron spectroscopy. The obtained results show that Bi3+ doping causes no changes in the valence band structure but an increase in the Fermi level by 0.6 eV. The summary of the obtained results directly demonstrates that the concept of the band-gap engineering in Bi3+-doped CsPbBr3 halide perovskite is not valid.",
keywords = "SINGLE-CRYSTALS, CARRIER LIFETIME, SOLAR-CELLS, SEMICONDUCTORS, IMPACT",
author = "Lozhkina, {Olga A.} and Murashkina, {Anna A.} and Shilovskikh, {Vladimir V.} and Kapitonov, {Yury V.} and Ryabchuk, {Vladimir K.} and Emeline, {Alexei V.} and Tsutomu Miyasaka",
year = "2018",
month = sep,
day = "20",
doi = "10.1021/acs.jpclett.8b02178",
language = "English",
volume = "9",
pages = "5408--5411",
journal = "Journal of Physical Chemistry Letters",
issn = "1948-7185",
publisher = "American Chemical Society",
number = "18",

}

RIS

TY - JOUR

T1 - Invalidity of Band-Gap Engineering Concept for Bi3+ Heterovalent Doping in CsPbBr3 Halide Perovskite

AU - Lozhkina, Olga A.

AU - Murashkina, Anna A.

AU - Shilovskikh, Vladimir V.

AU - Kapitonov, Yury V.

AU - Ryabchuk, Vladimir K.

AU - Emeline, Alexei V.

AU - Miyasaka, Tsutomu

PY - 2018/9/20

Y1 - 2018/9/20

N2 - Heterovalent CsPbBr3 doping with Bi results in a significant red shift of the optical absorption of both single-crystal and powdered samples. The results of low-temperature (3.6 K) photoluminescence studies of perovskite single crystals indicate that the position of the excitonic luminescence peak remains unaffected by Bi doping that, in turn, infers that the band gap of Bi-doped perovskite is not changed as well. The position and state density distribution of the valence band and Fermi level of single-crystal perovskites were determined by another direct method of ultraviolet photoelectron spectroscopy. The obtained results show that Bi3+ doping causes no changes in the valence band structure but an increase in the Fermi level by 0.6 eV. The summary of the obtained results directly demonstrates that the concept of the band-gap engineering in Bi3+-doped CsPbBr3 halide perovskite is not valid.

AB - Heterovalent CsPbBr3 doping with Bi results in a significant red shift of the optical absorption of both single-crystal and powdered samples. The results of low-temperature (3.6 K) photoluminescence studies of perovskite single crystals indicate that the position of the excitonic luminescence peak remains unaffected by Bi doping that, in turn, infers that the band gap of Bi-doped perovskite is not changed as well. The position and state density distribution of the valence band and Fermi level of single-crystal perovskites were determined by another direct method of ultraviolet photoelectron spectroscopy. The obtained results show that Bi3+ doping causes no changes in the valence band structure but an increase in the Fermi level by 0.6 eV. The summary of the obtained results directly demonstrates that the concept of the band-gap engineering in Bi3+-doped CsPbBr3 halide perovskite is not valid.

KW - SINGLE-CRYSTALS

KW - CARRIER LIFETIME

KW - SOLAR-CELLS

KW - SEMICONDUCTORS

KW - IMPACT

UR - http://www.scopus.com/inward/record.url?scp=85053308024&partnerID=8YFLogxK

U2 - 10.1021/acs.jpclett.8b02178

DO - 10.1021/acs.jpclett.8b02178

M3 - Article

AN - SCOPUS:85053308024

VL - 9

SP - 5408

EP - 5411

JO - Journal of Physical Chemistry Letters

JF - Journal of Physical Chemistry Letters

SN - 1948-7185

IS - 18

ER -

ID: 34507976