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Intersection Nodes of Basal Screw Dislocations as Luminous Quantum Dots in GaN. / Medvedev, Oleg; Vyvenko, Oleg.

в: Physica Status Solidi - Rapid Research Letters, Том 11, № 12, 1700297, 01.12.2017.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Medvedev, O & Vyvenko, O 2017, 'Intersection Nodes of Basal Screw Dislocations as Luminous Quantum Dots in GaN', Physica Status Solidi - Rapid Research Letters, Том. 11, № 12, 1700297. https://doi.org/10.1002/pssr.201700297

APA

Medvedev, O., & Vyvenko, O. (2017). Intersection Nodes of Basal Screw Dislocations as Luminous Quantum Dots in GaN. Physica Status Solidi - Rapid Research Letters, 11(12), [1700297]. https://doi.org/10.1002/pssr.201700297

Vancouver

Medvedev O, Vyvenko O. Intersection Nodes of Basal Screw Dislocations as Luminous Quantum Dots in GaN. Physica Status Solidi - Rapid Research Letters. 2017 Дек. 1;11(12). 1700297. https://doi.org/10.1002/pssr.201700297

Author

Medvedev, Oleg ; Vyvenko, Oleg. / Intersection Nodes of Basal Screw Dislocations as Luminous Quantum Dots in GaN. в: Physica Status Solidi - Rapid Research Letters. 2017 ; Том 11, № 12.

BibTeX

@article{7d8bb8e942cd4ec9a01a1c4dd92550d0,
title = "Intersection Nodes of Basal Screw Dislocations as Luminous Quantum Dots in GaN",
abstract = "For the first time, in situ direct cathodoluminescence observation of the formation of luminous dots with a particular spectral luminescence band at the intersection nodes of straight basal screw dislocations in GaN is reported. The formation of the nodes that luminesced at around 3.3 eV proceeded under electron beam excitation as a result of interaction between straight screw dislocations, which possessed an own luminescence band at 3.1–3.2 eV. Possible configurations of the structure of dislocation nodes for the perfect and for the dissociated dislocations are presented and discussed, together with the properties of intersection-related luminescence (IRL). The origin of IRL is tentatively ascribed to the optical transition between electronic states of quantum dots formed by extended dislocation nodes, consisting of I2 stacking faults bounded by 30° partial dislocations.",
keywords = "cathodoluminescence, dislocation, dislocation nodes, GaN, quantum dots",
author = "Oleg Medvedev and Oleg Vyvenko",
year = "2017",
month = dec,
day = "1",
doi = "10.1002/pssr.201700297",
language = "English",
volume = "11",
journal = "Physica Status Solidi - Rapid Research Letetrs",
issn = "1862-6254",
publisher = "Wiley-Blackwell",
number = "12",

}

RIS

TY - JOUR

T1 - Intersection Nodes of Basal Screw Dislocations as Luminous Quantum Dots in GaN

AU - Medvedev, Oleg

AU - Vyvenko, Oleg

PY - 2017/12/1

Y1 - 2017/12/1

N2 - For the first time, in situ direct cathodoluminescence observation of the formation of luminous dots with a particular spectral luminescence band at the intersection nodes of straight basal screw dislocations in GaN is reported. The formation of the nodes that luminesced at around 3.3 eV proceeded under electron beam excitation as a result of interaction between straight screw dislocations, which possessed an own luminescence band at 3.1–3.2 eV. Possible configurations of the structure of dislocation nodes for the perfect and for the dissociated dislocations are presented and discussed, together with the properties of intersection-related luminescence (IRL). The origin of IRL is tentatively ascribed to the optical transition between electronic states of quantum dots formed by extended dislocation nodes, consisting of I2 stacking faults bounded by 30° partial dislocations.

AB - For the first time, in situ direct cathodoluminescence observation of the formation of luminous dots with a particular spectral luminescence band at the intersection nodes of straight basal screw dislocations in GaN is reported. The formation of the nodes that luminesced at around 3.3 eV proceeded under electron beam excitation as a result of interaction between straight screw dislocations, which possessed an own luminescence band at 3.1–3.2 eV. Possible configurations of the structure of dislocation nodes for the perfect and for the dissociated dislocations are presented and discussed, together with the properties of intersection-related luminescence (IRL). The origin of IRL is tentatively ascribed to the optical transition between electronic states of quantum dots formed by extended dislocation nodes, consisting of I2 stacking faults bounded by 30° partial dislocations.

KW - cathodoluminescence

KW - dislocation

KW - dislocation nodes

KW - GaN

KW - quantum dots

UR - http://www.scopus.com/inward/record.url?scp=85038088136&partnerID=8YFLogxK

U2 - 10.1002/pssr.201700297

DO - 10.1002/pssr.201700297

M3 - Article

AN - SCOPUS:85038088136

VL - 11

JO - Physica Status Solidi - Rapid Research Letetrs

JF - Physica Status Solidi - Rapid Research Letetrs

SN - 1862-6254

IS - 12

M1 - 1700297

ER -

ID: 36388330