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Intercalation synthesis of cobalt silicide under a graphene layer. / Grebenyuk, G. S.; Gomoyunova, M. V.; Vilkov, O. Yu; Senkovskii, B. V.; Pronin, I. I.

в: Physics of the Solid State, Том 58, № 10, 2016, стр. 2135-2140.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Grebenyuk, GS, Gomoyunova, MV, Vilkov, OY, Senkovskii, BV & Pronin, II 2016, 'Intercalation synthesis of cobalt silicide under a graphene layer', Physics of the Solid State, Том. 58, № 10, стр. 2135-2140. https://doi.org/10.1134/S1063783416100164

APA

Grebenyuk, G. S., Gomoyunova, M. V., Vilkov, O. Y., Senkovskii, B. V., & Pronin, I. I. (2016). Intercalation synthesis of cobalt silicide under a graphene layer. Physics of the Solid State, 58(10), 2135-2140. https://doi.org/10.1134/S1063783416100164

Vancouver

Grebenyuk GS, Gomoyunova MV, Vilkov OY, Senkovskii BV, Pronin II. Intercalation synthesis of cobalt silicide under a graphene layer. Physics of the Solid State. 2016;58(10):2135-2140. https://doi.org/10.1134/S1063783416100164

Author

Grebenyuk, G. S. ; Gomoyunova, M. V. ; Vilkov, O. Yu ; Senkovskii, B. V. ; Pronin, I. I. / Intercalation synthesis of cobalt silicide under a graphene layer. в: Physics of the Solid State. 2016 ; Том 58, № 10. стр. 2135-2140.

BibTeX

@article{0ab2be59b84841079d5c500692e17abc,
title = "Intercalation synthesis of cobalt silicide under a graphene layer",
abstract = "The silicon intercalation under single-layer graphene formed on the surface of an epitaxial Co(0001) film was investigated. The experiments were performed under conditions of ultra-high vacuum. The thickness of silicon films was varied within the range of up to 1 nm, and the temperature of their annealing was 500°C. The characterization of the samples was carried out in situ by the methods of low-energy electron diffraction, high-energy-resolution photoelectron spectroscopy using synchrotron radiation, and magnetic linear dichroism in photoemission of Co 3p electrons. New data were obtained on the evolution of the atomic and electronic structure, as well as on the magnetic properties of the system with an increase in the amount of intercalated silicon. It was shown that the intercalation under a graphene layer is accompanied by the synthesis of surface silicide Co2Si and a solid solution of silicon in cobalt.",
author = "Grebenyuk, {G. S.} and Gomoyunova, {M. V.} and Vilkov, {O. Yu} and Senkovskii, {B. V.} and Pronin, {I. I.}",
year = "2016",
doi = "10.1134/S1063783416100164",
language = "English",
volume = "58",
pages = "2135--2140",
journal = "Physics of the Solid State",
issn = "1063-7834",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "10",

}

RIS

TY - JOUR

T1 - Intercalation synthesis of cobalt silicide under a graphene layer

AU - Grebenyuk, G. S.

AU - Gomoyunova, M. V.

AU - Vilkov, O. Yu

AU - Senkovskii, B. V.

AU - Pronin, I. I.

PY - 2016

Y1 - 2016

N2 - The silicon intercalation under single-layer graphene formed on the surface of an epitaxial Co(0001) film was investigated. The experiments were performed under conditions of ultra-high vacuum. The thickness of silicon films was varied within the range of up to 1 nm, and the temperature of their annealing was 500°C. The characterization of the samples was carried out in situ by the methods of low-energy electron diffraction, high-energy-resolution photoelectron spectroscopy using synchrotron radiation, and magnetic linear dichroism in photoemission of Co 3p electrons. New data were obtained on the evolution of the atomic and electronic structure, as well as on the magnetic properties of the system with an increase in the amount of intercalated silicon. It was shown that the intercalation under a graphene layer is accompanied by the synthesis of surface silicide Co2Si and a solid solution of silicon in cobalt.

AB - The silicon intercalation under single-layer graphene formed on the surface of an epitaxial Co(0001) film was investigated. The experiments were performed under conditions of ultra-high vacuum. The thickness of silicon films was varied within the range of up to 1 nm, and the temperature of their annealing was 500°C. The characterization of the samples was carried out in situ by the methods of low-energy electron diffraction, high-energy-resolution photoelectron spectroscopy using synchrotron radiation, and magnetic linear dichroism in photoemission of Co 3p electrons. New data were obtained on the evolution of the atomic and electronic structure, as well as on the magnetic properties of the system with an increase in the amount of intercalated silicon. It was shown that the intercalation under a graphene layer is accompanied by the synthesis of surface silicide Co2Si and a solid solution of silicon in cobalt.

UR - http://www.scopus.com/inward/record.url?scp=84988694436&partnerID=8YFLogxK

U2 - 10.1134/S1063783416100164

DO - 10.1134/S1063783416100164

M3 - Article

AN - SCOPUS:84988694436

VL - 58

SP - 2135

EP - 2140

JO - Physics of the Solid State

JF - Physics of the Solid State

SN - 1063-7834

IS - 10

ER -

ID: 9287335