Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Insight on a novel layered semiconductors : CuTlS and CuTlSe. / Aliev, Ziya S.; Zúñiga, Fco Javier; Koroteev, Yury M.; Breczewski, Tomasz; Babanly, Nizamaddin B.; Amiraslanov, Imamaddin R.; Politano, Antonio; Madariaga, Gotzon; Babanly, Mahammad B.; Chulkov, Evgueni V.
в: Journal of Solid State Chemistry, Том 242, 01.10.2016, стр. 1-7.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Insight on a novel layered semiconductors
T2 - CuTlS and CuTlSe
AU - Aliev, Ziya S.
AU - Zúñiga, Fco Javier
AU - Koroteev, Yury M.
AU - Breczewski, Tomasz
AU - Babanly, Nizamaddin B.
AU - Amiraslanov, Imamaddin R.
AU - Politano, Antonio
AU - Madariaga, Gotzon
AU - Babanly, Mahammad B.
AU - Chulkov, Evgueni V.
N1 - Publisher Copyright: © 2016 Elsevier Inc.
PY - 2016/10/1
Y1 - 2016/10/1
N2 - Single crystals of the ternary copper compounds CuTlS and CuTlSe have been successfully grown from stoichiometric melt by using vertical Bridgman-Stockbarger method. The crystal structure of the both compounds has been determined by powder and single crystal X-Ray diffraction. They crystallize in the PbFCl structure type with two formula units in the tetragonal system, space group P4/nmm, а=3.922(2); c=8.123(6); Z=2 and а=4.087(6); c=8.195(19) Å; Z=2, respectively. The band structure of the reported compounds has been analyzed by means of full-potential linearized augmented plane-wave (FLAPW) method based on the density functional theory (DFT). Both compounds have similar band structures and are narrow-gap semiconductors with indirect band gap. The resistivity measurements agree with a semiconductor behavior although anomalies are observed at low temperature.
AB - Single crystals of the ternary copper compounds CuTlS and CuTlSe have been successfully grown from stoichiometric melt by using vertical Bridgman-Stockbarger method. The crystal structure of the both compounds has been determined by powder and single crystal X-Ray diffraction. They crystallize in the PbFCl structure type with two formula units in the tetragonal system, space group P4/nmm, а=3.922(2); c=8.123(6); Z=2 and а=4.087(6); c=8.195(19) Å; Z=2, respectively. The band structure of the reported compounds has been analyzed by means of full-potential linearized augmented plane-wave (FLAPW) method based on the density functional theory (DFT). Both compounds have similar band structures and are narrow-gap semiconductors with indirect band gap. The resistivity measurements agree with a semiconductor behavior although anomalies are observed at low temperature.
KW - Band structure
KW - Copper thallium chalcogenides
KW - Crystal growth
KW - Crystal structure
KW - Layered semiconductors
UR - http://www.scopus.com/inward/record.url?scp=84979270719&partnerID=8YFLogxK
U2 - 10.1016/j.jssc.2016.05.036
DO - 10.1016/j.jssc.2016.05.036
M3 - Article
AN - SCOPUS:84979270719
VL - 242
SP - 1
EP - 7
JO - Journal of Solid State Chemistry
JF - Journal of Solid State Chemistry
SN - 0022-4596
ER -
ID: 100699643