Standard

Influence of Nanosized Semiconducting Additives on the Ingition of Energy-Storage Materials Subjected to a High-Intensity Electron Beam. / Morozov, V.A.; Lukin, A.A.; Savenkov, G.G.

Proceedings of IVESC-ICEE-2014, Saint-Petersburg, Russia, June 30 – July 04, 2014. 2014. стр. 184-185.

Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная

Harvard

Morozov, VA, Lukin, AA & Savenkov, GG 2014, Influence of Nanosized Semiconducting Additives on the Ingition of Energy-Storage Materials Subjected to a High-Intensity Electron Beam. в Proceedings of IVESC-ICEE-2014, Saint-Petersburg, Russia, June 30 – July 04, 2014. стр. 184-185. https://doi.org/10.1109/IVESC.2014.6892039

APA

Morozov, V. A., Lukin, A. A., & Savenkov, G. G. (2014). Influence of Nanosized Semiconducting Additives on the Ingition of Energy-Storage Materials Subjected to a High-Intensity Electron Beam. в Proceedings of IVESC-ICEE-2014, Saint-Petersburg, Russia, June 30 – July 04, 2014 (стр. 184-185) https://doi.org/10.1109/IVESC.2014.6892039

Vancouver

Morozov VA, Lukin AA, Savenkov GG. Influence of Nanosized Semiconducting Additives on the Ingition of Energy-Storage Materials Subjected to a High-Intensity Electron Beam. в Proceedings of IVESC-ICEE-2014, Saint-Petersburg, Russia, June 30 – July 04, 2014. 2014. стр. 184-185 https://doi.org/10.1109/IVESC.2014.6892039

Author

Morozov, V.A. ; Lukin, A.A. ; Savenkov, G.G. / Influence of Nanosized Semiconducting Additives on the Ingition of Energy-Storage Materials Subjected to a High-Intensity Electron Beam. Proceedings of IVESC-ICEE-2014, Saint-Petersburg, Russia, June 30 – July 04, 2014. 2014. стр. 184-185

BibTeX

@inproceedings{db8584a2847c4e2a82cc5ee4ed6cce19,
title = "Influence of Nanosized Semiconducting Additives on the Ingition of Energy-Storage Materials Subjected to a High-Intensity Electron Beam",
author = "V.A. Morozov and A.A. Lukin and G.G. Savenkov",
year = "2014",
doi = "10.1109/IVESC.2014.6892039",
language = "English",
isbn = "9781479957729",
pages = "184--185",
booktitle = "Proceedings of IVESC-ICEE-2014, Saint-Petersburg, Russia, June 30 – July 04, 2014",

}

RIS

TY - GEN

T1 - Influence of Nanosized Semiconducting Additives on the Ingition of Energy-Storage Materials Subjected to a High-Intensity Electron Beam

AU - Morozov, V.A.

AU - Lukin, A.A.

AU - Savenkov, G.G.

PY - 2014

Y1 - 2014

U2 - 10.1109/IVESC.2014.6892039

DO - 10.1109/IVESC.2014.6892039

M3 - Conference contribution

SN - 9781479957729

SP - 184

EP - 185

BT - Proceedings of IVESC-ICEE-2014, Saint-Petersburg, Russia, June 30 – July 04, 2014

ER -

ID: 7020818