Standard

INFLUENCE OF ION IMPLANTATION ON SURFACE TRANSPORT OF CARRIERS IN SILICON. / Romanov, O. V.; Uritskii, V. Ya; Yafyasov, A. M.

в: Sov Phys Semicond, Том 10, № 2, 1976, стр. 198-201.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Romanov, OV, Uritskii, VY & Yafyasov, AM 1976, 'INFLUENCE OF ION IMPLANTATION ON SURFACE TRANSPORT OF CARRIERS IN SILICON.', Sov Phys Semicond, Том. 10, № 2, стр. 198-201.

APA

Romanov, O. V., Uritskii, V. Y., & Yafyasov, A. M. (1976). INFLUENCE OF ION IMPLANTATION ON SURFACE TRANSPORT OF CARRIERS IN SILICON. Sov Phys Semicond, 10(2), 198-201.

Vancouver

Romanov OV, Uritskii VY, Yafyasov AM. INFLUENCE OF ION IMPLANTATION ON SURFACE TRANSPORT OF CARRIERS IN SILICON. Sov Phys Semicond. 1976;10(2):198-201.

Author

Romanov, O. V. ; Uritskii, V. Ya ; Yafyasov, A. M. / INFLUENCE OF ION IMPLANTATION ON SURFACE TRANSPORT OF CARRIERS IN SILICON. в: Sov Phys Semicond. 1976 ; Том 10, № 2. стр. 198-201.

BibTeX

@article{1fe128db413b4d5a900f3a3840403b8f,
title = "INFLUENCE OF ION IMPLANTATION ON SURFACE TRANSPORT OF CARRIERS IN SILICON.",
abstract = "Measurements were made of the transverse magnetoresistance, current-voltage characteristics, and field effect. These were used in a study of the influence of small doses of implanted boron on the transport processes and distribution of free carriers in a surface layer of n-type Si. The samples were metal-insulator-semiconductor (MIS) transistors and varactors. An increase in the surface mobility of free carriers in the valence band was observed when small doses of an overcompensating impurity were implanted. Physical interpretation of this effect was based on the behavior of the electrostatic potential near the surface of a sample with an implanted layer, compared with a sample doped homogeneously throughout its thickness. It was demonstrated experimentally that the surface mobility could reach the bulk values.",
author = "Romanov, {O. V.} and Uritskii, {V. Ya} and Yafyasov, {A. M.}",
note = "Copyright: Copyright 2017 Elsevier B.V., All rights reserved.",
year = "1976",
language = "English",
volume = "10",
pages = "198--201",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "2",

}

RIS

TY - JOUR

T1 - INFLUENCE OF ION IMPLANTATION ON SURFACE TRANSPORT OF CARRIERS IN SILICON.

AU - Romanov, O. V.

AU - Uritskii, V. Ya

AU - Yafyasov, A. M.

N1 - Copyright: Copyright 2017 Elsevier B.V., All rights reserved.

PY - 1976

Y1 - 1976

N2 - Measurements were made of the transverse magnetoresistance, current-voltage characteristics, and field effect. These were used in a study of the influence of small doses of implanted boron on the transport processes and distribution of free carriers in a surface layer of n-type Si. The samples were metal-insulator-semiconductor (MIS) transistors and varactors. An increase in the surface mobility of free carriers in the valence band was observed when small doses of an overcompensating impurity were implanted. Physical interpretation of this effect was based on the behavior of the electrostatic potential near the surface of a sample with an implanted layer, compared with a sample doped homogeneously throughout its thickness. It was demonstrated experimentally that the surface mobility could reach the bulk values.

AB - Measurements were made of the transverse magnetoresistance, current-voltage characteristics, and field effect. These were used in a study of the influence of small doses of implanted boron on the transport processes and distribution of free carriers in a surface layer of n-type Si. The samples were metal-insulator-semiconductor (MIS) transistors and varactors. An increase in the surface mobility of free carriers in the valence band was observed when small doses of an overcompensating impurity were implanted. Physical interpretation of this effect was based on the behavior of the electrostatic potential near the surface of a sample with an implanted layer, compared with a sample doped homogeneously throughout its thickness. It was demonstrated experimentally that the surface mobility could reach the bulk values.

UR - http://www.scopus.com/inward/record.url?scp=0016923665&partnerID=8YFLogxK

M3 - Article

VL - 10

SP - 198

EP - 201

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 2

ER -

ID: 5391985