Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › Рецензирование
Impact of low temperature hydrogenation on recombination activity of dislocations in silicon. / Vyvenko, O. F.; Kittler, M.; Seifert, W.
Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting. Trans Tech Publications Ltd, 2005. стр. 151-156 (Solid State Phenomena; Том 108-109).Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › Рецензирование
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TY - GEN
T1 - Impact of low temperature hydrogenation on recombination activity of dislocations in silicon
AU - Vyvenko, O. F.
AU - Kittler, M.
AU - Seifert, W.
PY - 2005
Y1 - 2005
N2 - Silicon samples doped with gallium and intentionally contaminated with iron have been studied by means of electron beam current (EBIC), capacitance voltage (CV) and deep level transient spectroscopy (DLTS) methods. Reverse bias anneal (RBA) treatments at temperatures of 390-420K were used to move hydrogen and dissolved iron atoms away from the surface. A new procedure was developed to find dislocations lying on desirable depth from the surface and to analyze the depth distribution of their recombination contrast. Iron contaminated dislocations do not noticeably change their recombination activity when kept in an electrical field as high as 104 V/cm at 420K for several hours. This implies a tight binding of iron atoms at dislocations. The binding energy of iron with dislocations seems to be much larger than for Fe-Ga and H-Ga pairs. Low temperature hydrogenation of iron contaminated dislocations does not produce any passivation effect. In opposite, the recombination activity of the dislocations significantly increases after RBA treatment.
AB - Silicon samples doped with gallium and intentionally contaminated with iron have been studied by means of electron beam current (EBIC), capacitance voltage (CV) and deep level transient spectroscopy (DLTS) methods. Reverse bias anneal (RBA) treatments at temperatures of 390-420K were used to move hydrogen and dissolved iron atoms away from the surface. A new procedure was developed to find dislocations lying on desirable depth from the surface and to analyze the depth distribution of their recombination contrast. Iron contaminated dislocations do not noticeably change their recombination activity when kept in an electrical field as high as 104 V/cm at 420K for several hours. This implies a tight binding of iron atoms at dislocations. The binding energy of iron with dislocations seems to be much larger than for Fe-Ga and H-Ga pairs. Low temperature hydrogenation of iron contaminated dislocations does not produce any passivation effect. In opposite, the recombination activity of the dislocations significantly increases after RBA treatment.
KW - Dislocations
KW - DLTS
KW - EBIC
KW - Hydrogenation
KW - Iron contamination
KW - Recombination activity
KW - Silicon
UR - http://www.scopus.com/inward/record.url?scp=85088716064&partnerID=8YFLogxK
U2 - 10.4028/3-908451-13-2.151
DO - 10.4028/3-908451-13-2.151
M3 - Conference contribution
AN - SCOPUS:85088716064
SN - 3908451132
SN - 9783908451136
T3 - Solid State Phenomena
SP - 151
EP - 156
BT - Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting
PB - Trans Tech Publications Ltd
T2 - 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, GADEST 2005
Y2 - 25 September 2005 through 30 September 2005
ER -
ID: 87674438