The chapter is devoted to the results of the study structural and photovoltaic properties of the photo resistor that is based on the structure of ferroelectric–semiconductor (dielectric–semiconductor) DP-photo resistor with field effect. Main advantage of photo resistors on the field effect before the bulky photoconductivity photo resistors is the ability to improve the shape of the spectral sensitivity, such as the rise of short-wave part of the spectrum (UV-region) and the extension in the infrared region (IR-region) of the spectral sensitivity. The use of thin-film ferroelectric allows one to dramatically expand the spectral range in the IR region and create a photodetector for hyperspectral range, which work without external cooling.