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High-temperature annealing of bulk GaN layers. / Bessolov, V. N.; Zhilyaev, Yu V.; Kompan, M. E.; Konenkova, E. V.; Kukushkin, S. A.; Mesh, M. V.; Raevskiǐ, S. D.; Fradkov, A. L.; Fedirko, V. A.

в: Technical Physics Letters, Том 28, № 12, 01.12.2002, стр. 994-996.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Bessolov, VN, Zhilyaev, YV, Kompan, ME, Konenkova, EV, Kukushkin, SA, Mesh, MV, Raevskiǐ, SD, Fradkov, AL & Fedirko, VA 2002, 'High-temperature annealing of bulk GaN layers', Technical Physics Letters, Том. 28, № 12, стр. 994-996. https://doi.org/10.1134/1.1535513

APA

Bessolov, V. N., Zhilyaev, Y. V., Kompan, M. E., Konenkova, E. V., Kukushkin, S. A., Mesh, M. V., Raevskiǐ, S. D., Fradkov, A. L., & Fedirko, V. A. (2002). High-temperature annealing of bulk GaN layers. Technical Physics Letters, 28(12), 994-996. https://doi.org/10.1134/1.1535513

Vancouver

Bessolov VN, Zhilyaev YV, Kompan ME, Konenkova EV, Kukushkin SA, Mesh MV и пр. High-temperature annealing of bulk GaN layers. Technical Physics Letters. 2002 Дек. 1;28(12):994-996. https://doi.org/10.1134/1.1535513

Author

Bessolov, V. N. ; Zhilyaev, Yu V. ; Kompan, M. E. ; Konenkova, E. V. ; Kukushkin, S. A. ; Mesh, M. V. ; Raevskiǐ, S. D. ; Fradkov, A. L. ; Fedirko, V. A. / High-temperature annealing of bulk GaN layers. в: Technical Physics Letters. 2002 ; Том 28, № 12. стр. 994-996.

BibTeX

@article{f5f6666488dd4457a8aeb034de9fcb37,
title = "High-temperature annealing of bulk GaN layers",
abstract = "The influence of high-temperature (1010°C) annealing in a flow of gaseous ammonia on the properties of bulk GaN layers, grown by chloride-hydride VPE and then separated from SiO2 substrates, was studied using atomic force microscopy. The bulk (∼360-μm-thick) epitaxial GaN layers were synthesized in two steps: a first stage of nucleation and growth at a low temperature (530°C) followed by epitaxy at a high temperature (970°C). It was found that the annealing increases the nanorelief height and activates the donor-acceptor recombination on the surface of a GaN layer grown at the lower temperature and decreases the intensity of photoluminescence from the layer grown at the higher temperature.",
author = "Bessolov, {V. N.} and Zhilyaev, {Yu V.} and Kompan, {M. E.} and Konenkova, {E. V.} and Kukushkin, {S. A.} and Mesh, {M. V.} and Raevskiǐ, {S. D.} and Fradkov, {A. L.} and Fedirko, {V. A.}",
year = "2002",
month = dec,
day = "1",
doi = "10.1134/1.1535513",
language = "English",
volume = "28",
pages = "994--996",
journal = "Technical Physics Letters",
issn = "1063-7850",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "12",

}

RIS

TY - JOUR

T1 - High-temperature annealing of bulk GaN layers

AU - Bessolov, V. N.

AU - Zhilyaev, Yu V.

AU - Kompan, M. E.

AU - Konenkova, E. V.

AU - Kukushkin, S. A.

AU - Mesh, M. V.

AU - Raevskiǐ, S. D.

AU - Fradkov, A. L.

AU - Fedirko, V. A.

PY - 2002/12/1

Y1 - 2002/12/1

N2 - The influence of high-temperature (1010°C) annealing in a flow of gaseous ammonia on the properties of bulk GaN layers, grown by chloride-hydride VPE and then separated from SiO2 substrates, was studied using atomic force microscopy. The bulk (∼360-μm-thick) epitaxial GaN layers were synthesized in two steps: a first stage of nucleation and growth at a low temperature (530°C) followed by epitaxy at a high temperature (970°C). It was found that the annealing increases the nanorelief height and activates the donor-acceptor recombination on the surface of a GaN layer grown at the lower temperature and decreases the intensity of photoluminescence from the layer grown at the higher temperature.

AB - The influence of high-temperature (1010°C) annealing in a flow of gaseous ammonia on the properties of bulk GaN layers, grown by chloride-hydride VPE and then separated from SiO2 substrates, was studied using atomic force microscopy. The bulk (∼360-μm-thick) epitaxial GaN layers were synthesized in two steps: a first stage of nucleation and growth at a low temperature (530°C) followed by epitaxy at a high temperature (970°C). It was found that the annealing increases the nanorelief height and activates the donor-acceptor recombination on the surface of a GaN layer grown at the lower temperature and decreases the intensity of photoluminescence from the layer grown at the higher temperature.

UR - http://www.scopus.com/inward/record.url?scp=0036953592&partnerID=8YFLogxK

U2 - 10.1134/1.1535513

DO - 10.1134/1.1535513

M3 - Article

AN - SCOPUS:0036953592

VL - 28

SP - 994

EP - 996

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 12

ER -

ID: 37780825