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High Chern number van der Waals magnetic topological multilayers MnBi2Te4/hBN. / Bosnar, Mihovil; Вязовская, Александра Юрьевна; Петров, Евгений Константинович; Чулков, Евгений Владимирович; Otrokov, Mikhail M.

в: npj 2D Materials and Applications, Том 7, № 1, 33, 27.04.2023.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

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Bosnar, M, Вязовская, АЮ, Петров, ЕК, Чулков, ЕВ & Otrokov, MM 2023, 'High Chern number van der Waals magnetic topological multilayers MnBi2Te4/hBN', npj 2D Materials and Applications, Том. 7, № 1, 33. https://doi.org/10.1038/s41699-023-00396-y

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Author

Bosnar, Mihovil ; Вязовская, Александра Юрьевна ; Петров, Евгений Константинович ; Чулков, Евгений Владимирович ; Otrokov, Mikhail M. / High Chern number van der Waals magnetic topological multilayers MnBi2Te4/hBN. в: npj 2D Materials and Applications. 2023 ; Том 7, № 1.

BibTeX

@article{0fa77cdca5784399825ee582a3f9e5a7,
title = "High Chern number van der Waals magnetic topological multilayers MnBi2Te4/hBN",
abstract = "Chern insulators are two-dimensional magnetic topological materials that conduct electricity along their edges via the one-dimensional chiral modes. The number of these modes is a topological invariant called the first Chern number C that defines the quantized Hall conductance as Sx y = C e 2/h. Increasing C is pivotal for the realization of low-power-consumption topological electronics, but there has been no clear-cut solution to this problem so far, with the majority of existing Chern insulators showing C = 1. Here, by using state-of-the-art theoretical methods, we propose an efficient approach for the realization of the high-C state in MnBi2Te4/hBN van der Waals multilayer heterostructures. We show that a stack of n MnBi2Te4 films with C = 1 intercalated by hBN monolayers gives rise to a high Chern number state with C = n, characterized by n chiral edge modes. This state can be achieved both under the external magnetic field and without it, both cases leading to the quantized Hall conductance Sx y = C e 2/h. Our results, therefore, pave the way to practical high-C quantized Hall systems.",
author = "Mihovil Bosnar and Вязовская, {Александра Юрьевна} and Петров, {Евгений Константинович} and Чулков, {Евгений Владимирович} and Otrokov, {Mikhail M.}",
year = "2023",
month = apr,
day = "27",
doi = "10.1038/s41699-023-00396-y",
language = "English",
volume = "7",
journal = "npj 2D Materials and Applications",
issn = "2397-7132",
publisher = "Nature Publishing Group",
number = "1",

}

RIS

TY - JOUR

T1 - High Chern number van der Waals magnetic topological multilayers MnBi2Te4/hBN

AU - Bosnar, Mihovil

AU - Вязовская, Александра Юрьевна

AU - Петров, Евгений Константинович

AU - Чулков, Евгений Владимирович

AU - Otrokov, Mikhail M.

PY - 2023/4/27

Y1 - 2023/4/27

N2 - Chern insulators are two-dimensional magnetic topological materials that conduct electricity along their edges via the one-dimensional chiral modes. The number of these modes is a topological invariant called the first Chern number C that defines the quantized Hall conductance as Sx y = C e 2/h. Increasing C is pivotal for the realization of low-power-consumption topological electronics, but there has been no clear-cut solution to this problem so far, with the majority of existing Chern insulators showing C = 1. Here, by using state-of-the-art theoretical methods, we propose an efficient approach for the realization of the high-C state in MnBi2Te4/hBN van der Waals multilayer heterostructures. We show that a stack of n MnBi2Te4 films with C = 1 intercalated by hBN monolayers gives rise to a high Chern number state with C = n, characterized by n chiral edge modes. This state can be achieved both under the external magnetic field and without it, both cases leading to the quantized Hall conductance Sx y = C e 2/h. Our results, therefore, pave the way to practical high-C quantized Hall systems.

AB - Chern insulators are two-dimensional magnetic topological materials that conduct electricity along their edges via the one-dimensional chiral modes. The number of these modes is a topological invariant called the first Chern number C that defines the quantized Hall conductance as Sx y = C e 2/h. Increasing C is pivotal for the realization of low-power-consumption topological electronics, but there has been no clear-cut solution to this problem so far, with the majority of existing Chern insulators showing C = 1. Here, by using state-of-the-art theoretical methods, we propose an efficient approach for the realization of the high-C state in MnBi2Te4/hBN van der Waals multilayer heterostructures. We show that a stack of n MnBi2Te4 films with C = 1 intercalated by hBN monolayers gives rise to a high Chern number state with C = n, characterized by n chiral edge modes. This state can be achieved both under the external magnetic field and without it, both cases leading to the quantized Hall conductance Sx y = C e 2/h. Our results, therefore, pave the way to practical high-C quantized Hall systems.

UR - https://www.mendeley.com/catalogue/b56403e9-1cb2-3c56-90d9-969f94e161f8/

U2 - 10.1038/s41699-023-00396-y

DO - 10.1038/s41699-023-00396-y

M3 - Article

VL - 7

JO - npj 2D Materials and Applications

JF - npj 2D Materials and Applications

SN - 2397-7132

IS - 1

M1 - 33

ER -

ID: 106840077