Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
High Chern number van der Waals magnetic topological multilayers MnBi2Te4/hBN. / Bosnar, Mihovil; Вязовская, Александра Юрьевна; Петров, Евгений Константинович; Чулков, Евгений Владимирович; Otrokov, Mikhail M.
в: npj 2D Materials and Applications, Том 7, № 1, 33, 27.04.2023.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - High Chern number van der Waals magnetic topological multilayers MnBi2Te4/hBN
AU - Bosnar, Mihovil
AU - Вязовская, Александра Юрьевна
AU - Петров, Евгений Константинович
AU - Чулков, Евгений Владимирович
AU - Otrokov, Mikhail M.
PY - 2023/4/27
Y1 - 2023/4/27
N2 - Chern insulators are two-dimensional magnetic topological materials that conduct electricity along their edges via the one-dimensional chiral modes. The number of these modes is a topological invariant called the first Chern number C that defines the quantized Hall conductance as Sx y = C e 2/h. Increasing C is pivotal for the realization of low-power-consumption topological electronics, but there has been no clear-cut solution to this problem so far, with the majority of existing Chern insulators showing C = 1. Here, by using state-of-the-art theoretical methods, we propose an efficient approach for the realization of the high-C state in MnBi2Te4/hBN van der Waals multilayer heterostructures. We show that a stack of n MnBi2Te4 films with C = 1 intercalated by hBN monolayers gives rise to a high Chern number state with C = n, characterized by n chiral edge modes. This state can be achieved both under the external magnetic field and without it, both cases leading to the quantized Hall conductance Sx y = C e 2/h. Our results, therefore, pave the way to practical high-C quantized Hall systems.
AB - Chern insulators are two-dimensional magnetic topological materials that conduct electricity along their edges via the one-dimensional chiral modes. The number of these modes is a topological invariant called the first Chern number C that defines the quantized Hall conductance as Sx y = C e 2/h. Increasing C is pivotal for the realization of low-power-consumption topological electronics, but there has been no clear-cut solution to this problem so far, with the majority of existing Chern insulators showing C = 1. Here, by using state-of-the-art theoretical methods, we propose an efficient approach for the realization of the high-C state in MnBi2Te4/hBN van der Waals multilayer heterostructures. We show that a stack of n MnBi2Te4 films with C = 1 intercalated by hBN monolayers gives rise to a high Chern number state with C = n, characterized by n chiral edge modes. This state can be achieved both under the external magnetic field and without it, both cases leading to the quantized Hall conductance Sx y = C e 2/h. Our results, therefore, pave the way to practical high-C quantized Hall systems.
UR - https://www.mendeley.com/catalogue/b56403e9-1cb2-3c56-90d9-969f94e161f8/
U2 - 10.1038/s41699-023-00396-y
DO - 10.1038/s41699-023-00396-y
M3 - Article
VL - 7
JO - npj 2D Materials and Applications
JF - npj 2D Materials and Applications
SN - 2397-7132
IS - 1
M1 - 33
ER -
ID: 106840077