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Helium Ion Beam Enhanced Local Etching of Silicon Nitride. / Petrov, Yu. V.; Sharov, T. V.; Baraban, A. P.

в: AIP Conference Proceedings, Том 1748, № 1, 06.2016.

Результаты исследований: Научные публикации в периодических изданиях › статья в журнале по материалам конференции › Рецензирование

Harvard

Petrov, YV, Sharov, TV & Baraban, AP 2016, 'Helium Ion Beam Enhanced Local Etching of Silicon Nitride', AIP Conference Proceedings, Том. 1748, № 1. https://doi.org/10.1063/1.4954350

APA

Petrov, Y. V., Sharov, T. V., & Baraban, A. P. (2016). Helium Ion Beam Enhanced Local Etching of Silicon Nitride. AIP Conference Proceedings, 1748(1). https://doi.org/10.1063/1.4954350

Vancouver

Petrov YV, Sharov TV, Baraban AP. Helium Ion Beam Enhanced Local Etching of Silicon Nitride. AIP Conference Proceedings. 2016 Июнь;1748(1). https://doi.org/10.1063/1.4954350

Author

Petrov, Yu. V. ; Sharov, T. V. ; Baraban, A. P. / Helium Ion Beam Enhanced Local Etching of Silicon Nitride. в: AIP Conference Proceedings. 2016 ; Том 1748, № 1.

BibTeX

@article{8f62daac1137457ab4cb1ac4af8257f9,
title = "Helium Ion Beam Enhanced Local Etching of Silicon Nitride",
abstract = "We investigated the effect of the helium ion implantation on the etching rate of silicon nitride in hydrofluoric acid. Helium ions were implanted into 500-nm-thick silicon nitride film with energies from 15 keV to 35 keV. The ion fluence from 10(14) cm(-2) to 10(17) cm(-2) was used. All samples were investigated with a scanning electron microscope and atomic force microscope. The dependence of the etching rate on the concentration of ion-induced defects is obtained.",
author = "Petrov, {Yu. V.} and Sharov, {T. V.} and Baraban, {A. P.}",
year = "2016",
month = jun,
doi = "10.1063/1.4954350",
language = "English",
volume = "1748",
journal = "AIP Conference Proceedings",
issn = "0094-243X",
publisher = "American Institute of Physics",
number = "1",
note = "5th International Conference on State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN 2016 ; Conference date: 26-04-2016 Through 29-04-2016",
url = "http://www.globaleventslist.elsevier.com/events/2016/04/strann-2016-state-of-the-art-trends-of-scientific-research-of-artificial-and-natural-nanoobjects/, http://eibl.spbu.ru/strann-2016/",

}

RIS

TY - JOUR

T1 - Helium Ion Beam Enhanced Local Etching of Silicon Nitride

AU - Petrov, Yu. V.

AU - Sharov, T. V.

AU - Baraban, A. P.

N1 - Conference code: 5

PY - 2016/6

Y1 - 2016/6

N2 - We investigated the effect of the helium ion implantation on the etching rate of silicon nitride in hydrofluoric acid. Helium ions were implanted into 500-nm-thick silicon nitride film with energies from 15 keV to 35 keV. The ion fluence from 10(14) cm(-2) to 10(17) cm(-2) was used. All samples were investigated with a scanning electron microscope and atomic force microscope. The dependence of the etching rate on the concentration of ion-induced defects is obtained.

AB - We investigated the effect of the helium ion implantation on the etching rate of silicon nitride in hydrofluoric acid. Helium ions were implanted into 500-nm-thick silicon nitride film with energies from 15 keV to 35 keV. The ion fluence from 10(14) cm(-2) to 10(17) cm(-2) was used. All samples were investigated with a scanning electron microscope and atomic force microscope. The dependence of the etching rate on the concentration of ion-induced defects is obtained.

U2 - 10.1063/1.4954350

DO - 10.1063/1.4954350

M3 - Conference article

VL - 1748

JO - AIP Conference Proceedings

JF - AIP Conference Proceedings

SN - 0094-243X

IS - 1

T2 - 5th International Conference on State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects

Y2 - 26 April 2016 through 29 April 2016

ER -

ID: 73845056