The temperature dependences (80-500 K) of the Hall coefficient and the resistivity of samples of schungite of types I and III (schungite I and schungite III), as well as a commercial glassy carbon, with carbon contents equal to 98, 30, and 99.99%, respectively, are measured. The character of the dependences of the resistivity and its numerical values are similar to those observed in polycrystalline graphites with a high degree of disorder and in synthetic glassy carbon. Conversely, the Hall coefficient in the schungite samples, as in high-quality single crystals and n-type intercalated compounds of graphite, is found to be negative, small in magnitude, and weakly dependent on the temperature. At room temperature it is equal to 2.83×10^-2 and 0.305 cm³/C in schungite I and schungite III, respectively, the Hall mobility of the charge carriers in these materials is 8.0 and 9.2 cm²/V·s, and the Hall carrier concentration is 2.2×10²⁰ and 2.0×10¹⁹ cm^-3.