Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Graphene fabrication via carbon segregation through transition metal films. / Pudikov, D. A.; Zhizhin, E. V.; Rybkin, A. G.; Shikin, A. M.
в: Thin Solid Films, Том 648, 28.02.2018, стр. 120-127.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
}
TY - JOUR
T1 - Graphene fabrication via carbon segregation through transition metal films
AU - Pudikov, D. A.
AU - Zhizhin, E. V.
AU - Rybkin, A. G.
AU - Shikin, A. M.
PY - 2018/2/28
Y1 - 2018/2/28
N2 - A detailed study of graphene growth process via segregation of carbon atoms through a 16 nm-thick metal film is presented. Two different transition metals – Co and Ni – are deposited on a highly-oriented pyrolytic graphite (HOPG) substrate. It is demonstrated that annealing of the systems leads to segregation of carbon atoms from the substrate to the surface. X-ray photoemission studies show that in both cases a metal-rich carbide phase is formed in a near-surface area, which after a low-temperature annealing transforms into carbon-rich carbide phase. After further increase of the annealing temperature this carbide phase is transformed into graphene mono- and multilayers. Low energy electron diffraction measurements show that at the final stage a large part of the sample is covered with highly-ordered graphene domains, however a lot of small variously oriented domains can also be seen. It is shown that graphene on Co/HOPG is formed at comparable temperatures to that on Ni/HOPG, and it has better ordered surface.
AB - A detailed study of graphene growth process via segregation of carbon atoms through a 16 nm-thick metal film is presented. Two different transition metals – Co and Ni – are deposited on a highly-oriented pyrolytic graphite (HOPG) substrate. It is demonstrated that annealing of the systems leads to segregation of carbon atoms from the substrate to the surface. X-ray photoemission studies show that in both cases a metal-rich carbide phase is formed in a near-surface area, which after a low-temperature annealing transforms into carbon-rich carbide phase. After further increase of the annealing temperature this carbide phase is transformed into graphene mono- and multilayers. Low energy electron diffraction measurements show that at the final stage a large part of the sample is covered with highly-ordered graphene domains, however a lot of small variously oriented domains can also be seen. It is shown that graphene on Co/HOPG is formed at comparable temperatures to that on Ni/HOPG, and it has better ordered surface.
KW - Carbide phase
KW - Graphene
KW - Segregation
KW - Synthesis
KW - Transition metal
UR - http://www.scopus.com/inward/record.url?scp=85041284883&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2018.01.009
DO - 10.1016/j.tsf.2018.01.009
M3 - Article
AN - SCOPUS:85041284883
VL - 648
SP - 120
EP - 127
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
ER -
ID: 36288036