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Graphene fabrication via carbon segregation through transition metal films. / Pudikov, D. A.; Zhizhin, E. V.; Rybkin, A. G.; Shikin, A. M.

в: Thin Solid Films, Том 648, 28.02.2018, стр. 120-127.

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Pudikov, D. A. ; Zhizhin, E. V. ; Rybkin, A. G. ; Shikin, A. M. / Graphene fabrication via carbon segregation through transition metal films. в: Thin Solid Films. 2018 ; Том 648. стр. 120-127.

BibTeX

@article{d2b2f55b2149410ca70cf1acbd3516ce,
title = "Graphene fabrication via carbon segregation through transition metal films",
abstract = "A detailed study of graphene growth process via segregation of carbon atoms through a 16 nm-thick metal film is presented. Two different transition metals – Co and Ni – are deposited on a highly-oriented pyrolytic graphite (HOPG) substrate. It is demonstrated that annealing of the systems leads to segregation of carbon atoms from the substrate to the surface. X-ray photoemission studies show that in both cases a metal-rich carbide phase is formed in a near-surface area, which after a low-temperature annealing transforms into carbon-rich carbide phase. After further increase of the annealing temperature this carbide phase is transformed into graphene mono- and multilayers. Low energy electron diffraction measurements show that at the final stage a large part of the sample is covered with highly-ordered graphene domains, however a lot of small variously oriented domains can also be seen. It is shown that graphene on Co/HOPG is formed at comparable temperatures to that on Ni/HOPG, and it has better ordered surface.",
keywords = "Carbide phase, Graphene, Segregation, Synthesis, Transition metal",
author = "Pudikov, {D. A.} and Zhizhin, {E. V.} and Rybkin, {A. G.} and Shikin, {A. M.}",
year = "2018",
month = feb,
day = "28",
doi = "10.1016/j.tsf.2018.01.009",
language = "English",
volume = "648",
pages = "120--127",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Graphene fabrication via carbon segregation through transition metal films

AU - Pudikov, D. A.

AU - Zhizhin, E. V.

AU - Rybkin, A. G.

AU - Shikin, A. M.

PY - 2018/2/28

Y1 - 2018/2/28

N2 - A detailed study of graphene growth process via segregation of carbon atoms through a 16 nm-thick metal film is presented. Two different transition metals – Co and Ni – are deposited on a highly-oriented pyrolytic graphite (HOPG) substrate. It is demonstrated that annealing of the systems leads to segregation of carbon atoms from the substrate to the surface. X-ray photoemission studies show that in both cases a metal-rich carbide phase is formed in a near-surface area, which after a low-temperature annealing transforms into carbon-rich carbide phase. After further increase of the annealing temperature this carbide phase is transformed into graphene mono- and multilayers. Low energy electron diffraction measurements show that at the final stage a large part of the sample is covered with highly-ordered graphene domains, however a lot of small variously oriented domains can also be seen. It is shown that graphene on Co/HOPG is formed at comparable temperatures to that on Ni/HOPG, and it has better ordered surface.

AB - A detailed study of graphene growth process via segregation of carbon atoms through a 16 nm-thick metal film is presented. Two different transition metals – Co and Ni – are deposited on a highly-oriented pyrolytic graphite (HOPG) substrate. It is demonstrated that annealing of the systems leads to segregation of carbon atoms from the substrate to the surface. X-ray photoemission studies show that in both cases a metal-rich carbide phase is formed in a near-surface area, which after a low-temperature annealing transforms into carbon-rich carbide phase. After further increase of the annealing temperature this carbide phase is transformed into graphene mono- and multilayers. Low energy electron diffraction measurements show that at the final stage a large part of the sample is covered with highly-ordered graphene domains, however a lot of small variously oriented domains can also be seen. It is shown that graphene on Co/HOPG is formed at comparable temperatures to that on Ni/HOPG, and it has better ordered surface.

KW - Carbide phase

KW - Graphene

KW - Segregation

KW - Synthesis

KW - Transition metal

UR - http://www.scopus.com/inward/record.url?scp=85041284883&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2018.01.009

DO - 10.1016/j.tsf.2018.01.009

M3 - Article

AN - SCOPUS:85041284883

VL - 648

SP - 120

EP - 127

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -

ID: 36288036