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Gigantic 2D laser-induced photovoltaic effect in magnetically-doped topological insulators for surface zero-bias spin-polarized current generation. / Shikin, A. M.; Voroshin, V.; Rybkin, A. G.; Kokh, K. A.; Tereshchenko, O. E.; Ishida, Y.; Kimura, A.
в: 2D Materials, Том 5, № 1, 015015, 01.2018.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Gigantic 2D laser-induced photovoltaic effect in magnetically-doped topological insulators for surface zero-bias spin-polarized current generation
AU - Shikin, A. M.
AU - Voroshin, V.
AU - Rybkin, A. G.
AU - Kokh, K. A.
AU - Tereshchenko, O. E.
AU - Ishida, Y.
AU - Kimura, A.
N1 - Funding Information: The work was supported by the grant of the Saint Petersburg State University for scientific investigations (grant No. 15.61.202.2015) and the grant of the Russian Science Foundation (grant No. 17-12-01047), in the part of the crystal growth and structural characterization.
PY - 2018/1
Y1 - 2018/1
N2 - A new kind of 2D photovoltaic effect (PVE) with the generation of anomalously large surface photovoltage up to 210 meV in magnetically doped topological insulators (TIs) has been studied by the laser time-resolved pump-probe angle-resolved photoelectron spectroscopy. The PVE has maximal efficiency for TIs with high occupation of the upper Dirac cone (DC) states and the Dirac point located inside the fundamental energy gap. For TIs with low occupation of the upper DC states and the Dirac point located inside the valence band the generated surface photovoltage is significantly reduced. We have shown that the observed giant PVE is related to the laser-generated electron-hole asymmetry followed by accumulation of the photoexcited electrons at the surface. It is accompanied by the 2D relaxation process with the generation of zero-bias spin-polarized currents flowing along the topological surface states (TSSs) outside the laser beam spot. As a result, the spin-polarized current generates an effective in-plane magnetic field that is experimentally confirmed by the k II-shift of the DC relative to the bottom non-spin-polarized conduction band states. The realized 2D PVE can be considered as a source for the generation of zero-bias surface spin-polarized currents and the laser-induced local surface magnetization developed in such kind 2D TSS materials.
AB - A new kind of 2D photovoltaic effect (PVE) with the generation of anomalously large surface photovoltage up to 210 meV in magnetically doped topological insulators (TIs) has been studied by the laser time-resolved pump-probe angle-resolved photoelectron spectroscopy. The PVE has maximal efficiency for TIs with high occupation of the upper Dirac cone (DC) states and the Dirac point located inside the fundamental energy gap. For TIs with low occupation of the upper DC states and the Dirac point located inside the valence band the generated surface photovoltage is significantly reduced. We have shown that the observed giant PVE is related to the laser-generated electron-hole asymmetry followed by accumulation of the photoexcited electrons at the surface. It is accompanied by the 2D relaxation process with the generation of zero-bias spin-polarized currents flowing along the topological surface states (TSSs) outside the laser beam spot. As a result, the spin-polarized current generates an effective in-plane magnetic field that is experimentally confirmed by the k II-shift of the DC relative to the bottom non-spin-polarized conduction band states. The realized 2D PVE can be considered as a source for the generation of zero-bias surface spin-polarized currents and the laser-induced local surface magnetization developed in such kind 2D TSS materials.
KW - 2D systems
KW - electronic and spin structure
KW - magnetically doped topological insulators
KW - spin-polarized currents
KW - surface photovoltaic effect
KW - time-resolved photoemission spectroscopy
UR - http://www.scopus.com/inward/record.url?scp=85040099677&partnerID=8YFLogxK
U2 - 10.1088/2053-1583/aa928a
DO - 10.1088/2053-1583/aa928a
M3 - Article
VL - 5
JO - 2D Materials
JF - 2D Materials
SN - 2053-1583
IS - 1
M1 - 015015
ER -
ID: 11794642