TY - JOUR

T1 - Gateable spin memory in InP quantum dots

AU - Yugova, I. A.

AU - Ignatiev, I. V.

AU - Verbin, S. Yu

AU - Gerlovin, I. Ya

AU - Kalevich, V. K.

AU - Shiryaev, A. Yu

AU - Kavokin, K. V.

AU - Masumoto, Y.

PY - 2003/9/15

Y1 - 2003/9/15

N2 - In photoluminescence kinetics of the InP quantum dots, we have found a long-lived component of the degree of circular polarization, showing practically no decay during the lifetime of excitation. It is shown that this effect is observed only in the charged quantum dots. The amplitude of the long-lived PL polarization can be controlled by an applied electric field and may be as high as 50% in the case of quasi resonance excitation. The existence of the long-lived component of the polarization is the clear evidence of large lifetime of the electron spin polarization in quantum dots.

AB - In photoluminescence kinetics of the InP quantum dots, we have found a long-lived component of the degree of circular polarization, showing practically no decay during the lifetime of excitation. It is shown that this effect is observed only in the charged quantum dots. The amplitude of the long-lived PL polarization can be controlled by an applied electric field and may be as high as 50% in the case of quasi resonance excitation. The existence of the long-lived component of the polarization is the clear evidence of large lifetime of the electron spin polarization in quantum dots.

KW - Photoluminescence

KW - Quantum dots

KW - Spin dynamics

UR - http://www.scopus.com/inward/record.url?scp=0041375413&partnerID=8YFLogxK

U2 - 10.1117/12.514458

DO - 10.1117/12.514458

M3 - Conference article

AN - SCOPUS:0041375413

VL - 5023

SP - 417

EP - 420

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

T2 - 10th International Symposium on Nanostructures: Physics and Technology

Y2 - 17 June 2002 through 21 June 2002

ER -