GaPN/GaP nanowire-polymer matrix › Научные исследования в СПбГУ

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GaPN/GaP nanowire-polymer matrix : Photoluminescence study. / Koval, O. Yu; Fedorov, V. V.; Bolshakov, A. D.; Neplokh, V. V.; Strom, I. V.; Serov, A. Yu; Mukhin, I. S.

в: Journal of Physics: Conference Series, Том 1697, № 1, 012157, 17.12.2020.

Результаты исследований: Научные публикации в периодических изданиях › статья в журнале по материалам конференции › Рецензирование

Harvard

Koval, OY, Fedorov, VV, Bolshakov, AD, Neplokh, VV, Strom, IV, Serov, AY & Mukhin, IS 2020, 'GaPN/GaP nanowire-polymer matrix: Photoluminescence study', Journal of Physics: Conference Series, Том. 1697, № 1, 012157. https://doi.org/10.1088/1742-6596/1697/1/012157

APA

Koval, O. Y., Fedorov, V. V., Bolshakov, A. D., Neplokh, V. V., Strom, I. V., Serov, A. Y., & Mukhin, I. S. (2020). GaPN/GaP nanowire-polymer matrix: Photoluminescence study. Journal of Physics: Conference Series, 1697(1), [012157]. https://doi.org/10.1088/1742-6596/1697/1/012157

Vancouver

Koval OY, Fedorov VV, Bolshakov AD, Neplokh VV, Strom IV, Serov AY и пр. GaPN/GaP nanowire-polymer matrix: Photoluminescence study. Journal of Physics: Conference Series. 2020 Дек. 17;1697(1). 012157. https://doi.org/10.1088/1742-6596/1697/1/012157

Author

Koval, O. Yu ; Fedorov, V. V. ; Bolshakov, A. D. ; Neplokh, V. V. ; Strom, I. V. ; Serov, A. Yu ; Mukhin, I. S. / GaPN/GaP nanowire-polymer matrix : Photoluminescence study. в: Journal of Physics: Conference Series. 2020 ; Том 1697, № 1.

BibTeX

@article{673af5ff2f21473eb0989be026cbfc41,

title = "GaPN/GaP nanowire-polymer matrix: Photoluminescence study",

abstract = "This study is devoted to the investigation of the optical properties and composition of GaPN/GaP nanowire heterostructure. Nanowire arrays were grown on Si substrate (111) by the plasma-assisted molecular beam epitaxy. Polydimethylsiloxane membrane encapsulation was used to obtain the free-standing NW arrays. The morphology of GaPN/GaP NW was investigated with scanning electron microscopy. The optical properties of the GaPN nanowire arrays were determined at the He temperature (5K) with photoluminescence spectroscopy. Analysis of photoluminescence response allowed us to conclude that the incorporation of nitrogen atoms during the growth occurs both in the nanowires and in the parasitic islands with different content. Direct bandgap-like behaviour of the GaPN/GaP nanowires demonstrates the potential of nanowire-polymer matrix practical application in future optoelectronic devices. ",

author = "Koval, {O. Yu} and Fedorov, {V. V.} and Bolshakov, {A. D.} and Neplokh, {V. V.} and Strom, {I. V.} and Serov, {A. Yu} and Mukhin, {I. S.}",

note = "Publisher Copyright: {\textcopyright} Published under licence by IOP Publishing Ltd. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; International Conference PhysicA.SPb 2020 ; Conference date: 19-10-2020 Through 23-10-2020",

year = "2020",

month = dec,

day = "17",

doi = "10.1088/1742-6596/1697/1/012157",

language = "English",

volume = "1697",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "IOP Publishing Ltd.",

number = "1",

url = "http://physica.spb.ru/, http://physica.spb.ru/archive/physicaspb2020/",

}

RIS

TY - JOUR

T1 - GaPN/GaP nanowire-polymer matrix

T2 - International Conference PhysicA.SPb 2020

AU - Koval, O. Yu

AU - Fedorov, V. V.

AU - Bolshakov, A. D.

AU - Neplokh, V. V.

AU - Strom, I. V.

AU - Serov, A. Yu

AU - Mukhin, I. S.

PY - 2020/12/17

Y1 - 2020/12/17

N2 - This study is devoted to the investigation of the optical properties and composition of GaPN/GaP nanowire heterostructure. Nanowire arrays were grown on Si substrate (111) by the plasma-assisted molecular beam epitaxy. Polydimethylsiloxane membrane encapsulation was used to obtain the free-standing NW arrays. The morphology of GaPN/GaP NW was investigated with scanning electron microscopy. The optical properties of the GaPN nanowire arrays were determined at the He temperature (5K) with photoluminescence spectroscopy. Analysis of photoluminescence response allowed us to conclude that the incorporation of nitrogen atoms during the growth occurs both in the nanowires and in the parasitic islands with different content. Direct bandgap-like behaviour of the GaPN/GaP nanowires demonstrates the potential of nanowire-polymer matrix practical application in future optoelectronic devices.

AB - This study is devoted to the investigation of the optical properties and composition of GaPN/GaP nanowire heterostructure. Nanowire arrays were grown on Si substrate (111) by the plasma-assisted molecular beam epitaxy. Polydimethylsiloxane membrane encapsulation was used to obtain the free-standing NW arrays. The morphology of GaPN/GaP NW was investigated with scanning electron microscopy. The optical properties of the GaPN nanowire arrays were determined at the He temperature (5K) with photoluminescence spectroscopy. Analysis of photoluminescence response allowed us to conclude that the incorporation of nitrogen atoms during the growth occurs both in the nanowires and in the parasitic islands with different content. Direct bandgap-like behaviour of the GaPN/GaP nanowires demonstrates the potential of nanowire-polymer matrix practical application in future optoelectronic devices.

UR - http://www.scopus.com/inward/record.url?scp=85098325626&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1697/1/012157

DO - 10.1088/1742-6596/1697/1/012157

M3 - Conference article

AN - SCOPUS:85098325626

VL - 1697

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012157

Y2 - 19 October 2020 through 23 October 2020

ER -

ID: 75641663