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Formation of two- and one-dimensional solid-phase quantum nanostructures in the CdHgTe-electrolyte system. / Bozhevolnov, V. B.; Yafyasov, A. M.; Konorov, P. P.

в: Semiconductors, Том 38, № 11, 01.11.2004, стр. 1332-1339.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

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@article{26c1f575498341db9b0c8ed6f3f34a87,
title = "Formation of two- and one-dimensional solid-phase quantum nanostructures in the CdHgTe-electrolyte system",
abstract = "It is shown experimentally and theoretically that structures that exhibit properties of two- and one-dimensional electron gas at room temperature can be formed on the basis of CdHgTe compounds in a semiconductor-electrolyte system. The methods for fabricating the quantum-confinement structures and in situ monitoring of the physical properties of such structures are described.",
author = "Bozhevolnov, {V. B.} and Yafyasov, {A. M.} and Konorov, {P. P.}",
year = "2004",
month = nov,
day = "1",
doi = "10.1134/1.1823070",
language = "English",
volume = "38",
pages = "1332--1339",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "11",

}

RIS

TY - JOUR

T1 - Formation of two- and one-dimensional solid-phase quantum nanostructures in the CdHgTe-electrolyte system

AU - Bozhevolnov, V. B.

AU - Yafyasov, A. M.

AU - Konorov, P. P.

PY - 2004/11/1

Y1 - 2004/11/1

N2 - It is shown experimentally and theoretically that structures that exhibit properties of two- and one-dimensional electron gas at room temperature can be formed on the basis of CdHgTe compounds in a semiconductor-electrolyte system. The methods for fabricating the quantum-confinement structures and in situ monitoring of the physical properties of such structures are described.

AB - It is shown experimentally and theoretically that structures that exhibit properties of two- and one-dimensional electron gas at room temperature can be formed on the basis of CdHgTe compounds in a semiconductor-electrolyte system. The methods for fabricating the quantum-confinement structures and in situ monitoring of the physical properties of such structures are described.

UR - http://www.scopus.com/inward/record.url?scp=10044220970&partnerID=8YFLogxK

U2 - 10.1134/1.1823070

DO - 10.1134/1.1823070

M3 - Article

AN - SCOPUS:10044220970

VL - 38

SP - 1332

EP - 1339

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 11

ER -

ID: 42240005