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Formation of Au Nanoparticles and Features of Etching of a Si Substrate under Irradiation with Atomic and Molecular Ions. / Tuzhilkin, M; Bespalova, P; Mishin, M; Колесников, Илья Евгеньевич; Karabeshkin, K; Karaseov, P; Titov , A.

в: Semiconductors, Том 54, № 1, 01.01.2020, стр. 137-143.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Tuzhilkin, M, Bespalova, P, Mishin, M, Колесников, ИЕ, Karabeshkin, K, Karaseov, P & Titov , A 2020, 'Formation of Au Nanoparticles and Features of Etching of a Si Substrate under Irradiation with Atomic and Molecular Ions', Semiconductors, Том. 54, № 1, стр. 137-143. https://doi.org/10.1134/S106378262001025X

APA

Tuzhilkin, M., Bespalova, P., Mishin, M., Колесников, И. Е., Karabeshkin, K., Karaseov, P., & Titov , A. (2020). Formation of Au Nanoparticles and Features of Etching of a Si Substrate under Irradiation with Atomic and Molecular Ions. Semiconductors, 54(1), 137-143. https://doi.org/10.1134/S106378262001025X

Vancouver

Tuzhilkin M, Bespalova P, Mishin M, Колесников ИЕ, Karabeshkin K, Karaseov P и пр. Formation of Au Nanoparticles and Features of Etching of a Si Substrate under Irradiation with Atomic and Molecular Ions. Semiconductors. 2020 Янв. 1;54(1):137-143. https://doi.org/10.1134/S106378262001025X

Author

Tuzhilkin, M ; Bespalova, P ; Mishin, M ; Колесников, Илья Евгеньевич ; Karabeshkin, K ; Karaseov, P ; Titov , A. / Formation of Au Nanoparticles and Features of Etching of a Si Substrate under Irradiation with Atomic and Molecular Ions. в: Semiconductors. 2020 ; Том 54, № 1. стр. 137-143.

BibTeX

@article{e890a37c1d9d4bc2a2eb67df5a3eddf8,
title = "Formation of Au Nanoparticles and Features of Etching of a Si Substrate under Irradiation with Atomic and Molecular Ions",
abstract = "Abstract: The formation of nanoparticles under the irradiation of a thin metallic gold film by accelerated atomic and molecular ions is demonstrated. The obtained structures are used to form porous silicon by the metal-assisted chemical etching. The size of the gold nanoparticles and structure of porous silicon greatly depend on the type of incident particles and their fluence. A local increase in the density of energy released at the target surface under molecular ion bombardment significantly reduces the doses required to form the desired film morphologies and spread of nanoparticles over the surface and simultaneously makes a weaker radiative impact on the substrate. The shape of the fluorescence and fluorescence-excitation spectra of porous silicon obtained from the irradiated structures is independent of the irradiation parameters, but changes with the etching-solution concentration.",
keywords = "Au nanoparticles, fluorescence, ion irradiation, molecular ions, porous silicon, DENSITY, GOLD NANOPARTICLES, SILICON NANOWIRES, COLLISION CASCADES",
author = "M Tuzhilkin and P Bespalova and M Mishin and Колесников, {Илья Евгеньевич} and K Karabeshkin and P Karaseov and A Titov",
year = "2020",
month = jan,
day = "1",
doi = "10.1134/S106378262001025X",
language = "English",
volume = "54",
pages = "137--143",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "1",

}

RIS

TY - JOUR

T1 - Formation of Au Nanoparticles and Features of Etching of a Si Substrate under Irradiation with Atomic and Molecular Ions

AU - Tuzhilkin, M

AU - Bespalova, P

AU - Mishin, M

AU - Колесников, Илья Евгеньевич

AU - Karabeshkin, K

AU - Karaseov, P

AU - Titov , A

PY - 2020/1/1

Y1 - 2020/1/1

N2 - Abstract: The formation of nanoparticles under the irradiation of a thin metallic gold film by accelerated atomic and molecular ions is demonstrated. The obtained structures are used to form porous silicon by the metal-assisted chemical etching. The size of the gold nanoparticles and structure of porous silicon greatly depend on the type of incident particles and their fluence. A local increase in the density of energy released at the target surface under molecular ion bombardment significantly reduces the doses required to form the desired film morphologies and spread of nanoparticles over the surface and simultaneously makes a weaker radiative impact on the substrate. The shape of the fluorescence and fluorescence-excitation spectra of porous silicon obtained from the irradiated structures is independent of the irradiation parameters, but changes with the etching-solution concentration.

AB - Abstract: The formation of nanoparticles under the irradiation of a thin metallic gold film by accelerated atomic and molecular ions is demonstrated. The obtained structures are used to form porous silicon by the metal-assisted chemical etching. The size of the gold nanoparticles and structure of porous silicon greatly depend on the type of incident particles and their fluence. A local increase in the density of energy released at the target surface under molecular ion bombardment significantly reduces the doses required to form the desired film morphologies and spread of nanoparticles over the surface and simultaneously makes a weaker radiative impact on the substrate. The shape of the fluorescence and fluorescence-excitation spectra of porous silicon obtained from the irradiated structures is independent of the irradiation parameters, but changes with the etching-solution concentration.

KW - Au nanoparticles

KW - fluorescence

KW - ion irradiation

KW - molecular ions

KW - porous silicon

KW - DENSITY

KW - GOLD NANOPARTICLES

KW - SILICON NANOWIRES

KW - COLLISION CASCADES

UR - http://www.scopus.com/inward/record.url?scp=85081636353&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/dab29e24-a38f-3002-9ecc-581d465ce02a/

U2 - 10.1134/S106378262001025X

DO - 10.1134/S106378262001025X

M3 - Article

VL - 54

SP - 137

EP - 143

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 1

ER -

ID: 70188543