Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Flexible and Stretchable UV-B Light-Emitting Diodes. / Kochetkov, Fedor M.; Kolesina, Diana; Vorobyev, Alexander; Hernandez, Roberto; Grenier, Vincent; Finot, Sylvain; Valera, Lucie; Julien, François; Jacopin, Gwénolé; Pavlov, Alexander; Nikitina, Ekaterina; Krasnikov, Dmitry V.; Nasibulin, Albert G.; Tchernycheva, Maria; Durand, Christophe; Мухин, Иван Сергеевич.
в: Small, Том 22, № 23, e14206, 22.04.2026.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
}
TY - JOUR
T1 - Flexible and Stretchable UV-B Light-Emitting Diodes
AU - Kochetkov, Fedor M.
AU - Kolesina, Diana
AU - Vorobyev, Alexander
AU - Hernandez, Roberto
AU - Grenier, Vincent
AU - Finot, Sylvain
AU - Valera, Lucie
AU - Julien, François
AU - Jacopin, Gwénolé
AU - Pavlov, Alexander
AU - Nikitina, Ekaterina
AU - Krasnikov, Dmitry V.
AU - Nasibulin, Albert G.
AU - Tchernycheva, Maria
AU - Durand, Christophe
AU - Мухин, Иван Сергеевич
PY - 2026/4/22
Y1 - 2026/4/22
N2 - Nanostructured ultraviolet light sources operating in the UV-B spectral range (280–325 nm) are critical for dermatological therapy, horticulture, disinfection, and wearable optoelectronics. This work presents the first elastic UV-B light-emitting diode membranes based on GaN microwires with a core–shell AlGaN/GaN active region, addressing both optical efficiency and flexibility challenges. Microwires were grown on sapphire, encapsulated into polydimethylsiloxane, and integrated with two types of electrodes based on the patterned films of single-walled carbon nanotubes and silver nanowires. The proposed single walled carbon nanotubes -based elastic electrodes maintain initial resistivity at 10% biaxial stretching. The device emits in the UV-B range at 307–321 nm under bias, achieving a current density of ∼3.9 A/cm2 at 18 V. The developed light-emitting diodes retain functionality under bending and 10% stretching, with a minimal spectral shift (
AB - Nanostructured ultraviolet light sources operating in the UV-B spectral range (280–325 nm) are critical for dermatological therapy, horticulture, disinfection, and wearable optoelectronics. This work presents the first elastic UV-B light-emitting diode membranes based on GaN microwires with a core–shell AlGaN/GaN active region, addressing both optical efficiency and flexibility challenges. Microwires were grown on sapphire, encapsulated into polydimethylsiloxane, and integrated with two types of electrodes based on the patterned films of single-walled carbon nanotubes and silver nanowires. The proposed single walled carbon nanotubes -based elastic electrodes maintain initial resistivity at 10% biaxial stretching. The device emits in the UV-B range at 307–321 nm under bias, achieving a current density of ∼3.9 A/cm2 at 18 V. The developed light-emitting diodes retain functionality under bending and 10% stretching, with a minimal spectral shift (
KW - III−V semiconductors
KW - PDMS
KW - UV-B light-emitting diodes
KW - carbon nanotubes
KW - elastic electronics
UR - https://www.mendeley.com/catalogue/605aecc5-c430-3ce4-9877-8895e5899d06/
U2 - 10.1002/smll.202514206
DO - 10.1002/smll.202514206
M3 - Article
VL - 22
JO - Small
JF - Small
SN - 1613-6810
IS - 23
M1 - e14206
ER -
ID: 150308948