The electrical resistance of a constrained domain wall (DW) in a nanojunction was discussed. It was found that the anisotropy of the electrodes favors a localization of the domain wall within the constriction (wire) revealing a positive domain-wall resistance. An applied magnetic field moved the domain wall toward one of the electrodes and reduced its width. A sizeable enhancement of the domain-wall resistance was found to be due to this compression of the domain wall.