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Ferroelectric switch for spin injection. / Zhuravlev, M. Ye; Jaswal, S. S.; Tsymbal, E. Y.; Sabirianov, R. F.

в: Applied Physics Letters, Том 87, № 22, 222114, 30.11.2005, стр. 1-3.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Zhuravlev, MY, Jaswal, SS, Tsymbal, EY & Sabirianov, RF 2005, 'Ferroelectric switch for spin injection', Applied Physics Letters, Том. 87, № 22, 222114, стр. 1-3. https://doi.org/10.1063/1.2138365

APA

Zhuravlev, M. Y., Jaswal, S. S., Tsymbal, E. Y., & Sabirianov, R. F. (2005). Ferroelectric switch for spin injection. Applied Physics Letters, 87(22), 1-3. [222114]. https://doi.org/10.1063/1.2138365

Vancouver

Zhuravlev MY, Jaswal SS, Tsymbal EY, Sabirianov RF. Ferroelectric switch for spin injection. Applied Physics Letters. 2005 Нояб. 30;87(22):1-3. 222114. https://doi.org/10.1063/1.2138365

Author

Zhuravlev, M. Ye ; Jaswal, S. S. ; Tsymbal, E. Y. ; Sabirianov, R. F. / Ferroelectric switch for spin injection. в: Applied Physics Letters. 2005 ; Том 87, № 22. стр. 1-3.

BibTeX

@article{eb7640d96c1f40f597d641e111a131b7,
title = "Ferroelectric switch for spin injection",
abstract = "A method for the switching of the spin polarization of the electric current injected into a semiconductor is proposed, based on injecting spins from a diluted magnetic semiconductor through a ferroelectric tunnel barrier. We show that the reversal of the electric polarization of the ferroelectric results in a sizable change in the spin polarization of the injected current, thereby providing a two-state electrical control of this spintronic device. We also predict a possibility of switching of tunneling magnetoresistance in magnetic tunnel junctions with a ferroelectric barrier and coexistence of tunneling magnetoresistance and giant electroresistance effects in these multiferroic tunnel junctions.",
author = "Zhuravlev, {M. Ye} and Jaswal, {S. S.} and Tsymbal, {E. Y.} and Sabirianov, {R. F.}",
year = "2005",
month = nov,
day = "30",
doi = "10.1063/1.2138365",
language = "English",
volume = "87",
pages = "1--3",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "22",

}

RIS

TY - JOUR

T1 - Ferroelectric switch for spin injection

AU - Zhuravlev, M. Ye

AU - Jaswal, S. S.

AU - Tsymbal, E. Y.

AU - Sabirianov, R. F.

PY - 2005/11/30

Y1 - 2005/11/30

N2 - A method for the switching of the spin polarization of the electric current injected into a semiconductor is proposed, based on injecting spins from a diluted magnetic semiconductor through a ferroelectric tunnel barrier. We show that the reversal of the electric polarization of the ferroelectric results in a sizable change in the spin polarization of the injected current, thereby providing a two-state electrical control of this spintronic device. We also predict a possibility of switching of tunneling magnetoresistance in magnetic tunnel junctions with a ferroelectric barrier and coexistence of tunneling magnetoresistance and giant electroresistance effects in these multiferroic tunnel junctions.

AB - A method for the switching of the spin polarization of the electric current injected into a semiconductor is proposed, based on injecting spins from a diluted magnetic semiconductor through a ferroelectric tunnel barrier. We show that the reversal of the electric polarization of the ferroelectric results in a sizable change in the spin polarization of the injected current, thereby providing a two-state electrical control of this spintronic device. We also predict a possibility of switching of tunneling magnetoresistance in magnetic tunnel junctions with a ferroelectric barrier and coexistence of tunneling magnetoresistance and giant electroresistance effects in these multiferroic tunnel junctions.

UR - http://www.scopus.com/inward/record.url?scp=27944445995&partnerID=8YFLogxK

U2 - 10.1063/1.2138365

DO - 10.1063/1.2138365

M3 - Article

AN - SCOPUS:27944445995

VL - 87

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 22

M1 - 222114

ER -

ID: 51234418