Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
The characteristics of silicon-oxide layers deposited by various technological methods are compared. It is shown that the catalytic method for obtaining silicon-oxide layers by molecular layering has a number of advantages. The main advantages are a low growth temperature, high-quality interface with a silicon substrate, and high growth rate of films. Studies by cathodoluminescence made it possible to evaluate the structural quality of silicon-oxide layers produced by molecular layering and confirmed the potential of this method in obtaining high-quality silicon-oxide films for broad practical application.
Язык оригинала | английский |
---|---|
Страницы (с-по) | 506-510 |
Число страниц | 5 |
Журнал | Semiconductors |
Том | 54 |
Номер выпуска | 4 |
DOI | |
Состояние | Опубликовано - 1 апр 2020 |
ID: 53454469