TY - JOUR

T1 - Experimental evaluation of the carrier lifetime in GaAs grown at low temperature

AU - Pastor, A. A.

AU - Serdobintsev, P. Yu

AU - Chaldyshev, V. V.

PY - 2012/5/1

Y1 - 2012/5/1

N2 - The relaxation dynamics of nonequilibrium charge carriers in gallium arsenide epitaxial films grown by molecular-beam epitaxy at low temperatures has been studied. The growth conditions of the epitaxial layer provided an excess arsenic content of 1.2% in the layer. In a material of this kind, the carrier lifetime is <1 ps. To examine carrier relaxation in the femtosecond range, an original scheme for measuring the refractive index dynamics was developed on the basis of the pump-probe technique. The lifetime of nonequilibrium charge carriers was evaluated to be (200 ± 35) fs.

AB - The relaxation dynamics of nonequilibrium charge carriers in gallium arsenide epitaxial films grown by molecular-beam epitaxy at low temperatures has been studied. The growth conditions of the epitaxial layer provided an excess arsenic content of 1.2% in the layer. In a material of this kind, the carrier lifetime is <1 ps. To examine carrier relaxation in the femtosecond range, an original scheme for measuring the refractive index dynamics was developed on the basis of the pump-probe technique. The lifetime of nonequilibrium charge carriers was evaluated to be (200 ± 35) fs.

UR - http://www.scopus.com/inward/record.url?scp=84860606361&partnerID=8YFLogxK

U2 - 10.1134/S106378261205017X

DO - 10.1134/S106378261205017X

M3 - Article

AN - SCOPUS:84860606361

VL - 46

SP - 619

EP - 621

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 5

ER -