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Excitons in CdTe/ZnTe heterostructure with atomically thin CdTe layers. / Filosofov, N. G. ; Serov, A. Yu. ; Karczewski, Grzegorz; Agekian, V. F. ; Mariette, H; Kochereshko, V. P. .

в: AIP Advances, Том 10, № 8, 085224, 01.08.2020.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

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@article{aed98c4225a646f7b961cc0d48339c76,
title = "Excitons in CdTe/ZnTe heterostructure with atomically thin CdTe layers",
abstract = "Heterostructures with atomically thin double quantum wells based on CdTe/ZnTe are investigated by optical spectroscopy (photoluminescence and reflectivity methods) as a function of temperature and density of excitation. Heavy and light exciton luminescence lines are observed with comparable intensities and different temperature behaviors (they cross each other at about 65° K). All these features agree with a complete calculation that takes into account both a very small chemical band offset for such monolayer CdTe inclusions in the ZnTe matrix (namely, 2%), and, consequently, the importance of Coulombic interaction in these double quantum wells.",
keywords = "Heterostructures, Optical spectroscopy, Electronic bandstructure, Semiconductors, Excitons, Quantum wells, mechanical stresses, photoluminescence, MOLECULAR-BEAM EPITAXY, BAND OFFSETS, SUPERLATTICES, ZNTE, CONFINEMENT, DEPENDENCE, ENERGIES",
author = "Filosofov, {N. G.} and Serov, {A. Yu.} and Grzegorz Karczewski and Agekian, {V. F.} and H Mariette and Kochereshko, {V. P.}",
note = "Publisher Copyright: {\textcopyright} 2020 Author(s).",
year = "2020",
month = aug,
day = "1",
doi = "10.1063/5.0012146",
language = "English",
volume = "10",
journal = "AIP Advances",
issn = "2158-3226",
publisher = "American Institute of Physics",
number = "8",

}

RIS

TY - JOUR

T1 - Excitons in CdTe/ZnTe heterostructure with atomically thin CdTe layers

AU - Filosofov, N. G.

AU - Serov, A. Yu.

AU - Karczewski, Grzegorz

AU - Agekian, V. F.

AU - Mariette, H

AU - Kochereshko, V. P.

N1 - Publisher Copyright: © 2020 Author(s).

PY - 2020/8/1

Y1 - 2020/8/1

N2 - Heterostructures with atomically thin double quantum wells based on CdTe/ZnTe are investigated by optical spectroscopy (photoluminescence and reflectivity methods) as a function of temperature and density of excitation. Heavy and light exciton luminescence lines are observed with comparable intensities and different temperature behaviors (they cross each other at about 65° K). All these features agree with a complete calculation that takes into account both a very small chemical band offset for such monolayer CdTe inclusions in the ZnTe matrix (namely, 2%), and, consequently, the importance of Coulombic interaction in these double quantum wells.

AB - Heterostructures with atomically thin double quantum wells based on CdTe/ZnTe are investigated by optical spectroscopy (photoluminescence and reflectivity methods) as a function of temperature and density of excitation. Heavy and light exciton luminescence lines are observed with comparable intensities and different temperature behaviors (they cross each other at about 65° K). All these features agree with a complete calculation that takes into account both a very small chemical band offset for such monolayer CdTe inclusions in the ZnTe matrix (namely, 2%), and, consequently, the importance of Coulombic interaction in these double quantum wells.

KW - Heterostructures

KW - Optical spectroscopy

KW - Electronic bandstructure

KW - Semiconductors

KW - Excitons

KW - Quantum wells

KW - mechanical stresses

KW - photoluminescence

KW - MOLECULAR-BEAM EPITAXY

KW - BAND OFFSETS

KW - SUPERLATTICES

KW - ZNTE

KW - CONFINEMENT

KW - DEPENDENCE

KW - ENERGIES

UR - http://www.scopus.com/inward/record.url?scp=85091565371&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/e710fe6a-e842-39e3-967c-23cd0f4227e4/

U2 - 10.1063/5.0012146

DO - 10.1063/5.0012146

M3 - Article

VL - 10

JO - AIP Advances

JF - AIP Advances

SN - 2158-3226

IS - 8

M1 - 085224

ER -

ID: 61324384