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Excitonic parameters of GaN studied by time-of-flight spectroscopy. / Toropov, A. A.; Pozina, G.; Bergman, J. P.; Glazov, M. M.; Gippius, N. A.; Disseix, P.; Leymarie, J.; Gil, B.; Monemar, B.

в: Applied Physics Letters, Том 99, № 10, 101108, 05.09.2011.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Toropov, AA, Pozina, G, Bergman, JP, Glazov, MM, Gippius, NA, Disseix, P, Leymarie, J, Gil, B & Monemar, B 2011, 'Excitonic parameters of GaN studied by time-of-flight spectroscopy', Applied Physics Letters, Том. 99, № 10, 101108. https://doi.org/10.1063/1.3625431

APA

Toropov, A. A., Pozina, G., Bergman, J. P., Glazov, M. M., Gippius, N. A., Disseix, P., Leymarie, J., Gil, B., & Monemar, B. (2011). Excitonic parameters of GaN studied by time-of-flight spectroscopy. Applied Physics Letters, 99(10), [101108]. https://doi.org/10.1063/1.3625431

Vancouver

Toropov AA, Pozina G, Bergman JP, Glazov MM, Gippius NA, Disseix P и пр. Excitonic parameters of GaN studied by time-of-flight spectroscopy. Applied Physics Letters. 2011 Сент. 5;99(10). 101108. https://doi.org/10.1063/1.3625431

Author

Toropov, A. A. ; Pozina, G. ; Bergman, J. P. ; Glazov, M. M. ; Gippius, N. A. ; Disseix, P. ; Leymarie, J. ; Gil, B. ; Monemar, B. / Excitonic parameters of GaN studied by time-of-flight spectroscopy. в: Applied Physics Letters. 2011 ; Том 99, № 10.

BibTeX

@article{fb5bd131d9f542bcb5b7fb40598880e3,
title = "Excitonic parameters of GaN studied by time-of-flight spectroscopy",
abstract = "We refine excitonic parameters of bulk GaN by means of time-of-flight spectroscopy of light pulses propagating through crystals. The influence of elastic photon scattering is excluded by using the multiple reflections of the pulses from crystal boundaries. The shapes of these reflexes in the time-energy plane depict the variation of the group velocity induced by excitonic resonances. Modeling of the shapes, as well as optical spectra, shows that a homogeneous width of the order of 10 μeV characterizes the exciton-polariton resonances within the crystal. The oscillator strength of A and B exciton-polaritons is determined as 0.0022 and 0.0016, respectively.",
author = "Toropov, {A. A.} and G. Pozina and Bergman, {J. P.} and Glazov, {M. M.} and Gippius, {N. A.} and P. Disseix and J. Leymarie and B. Gil and B. Monemar",
year = "2011",
month = sep,
day = "5",
doi = "10.1063/1.3625431",
language = "English",
volume = "99",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "10",

}

RIS

TY - JOUR

T1 - Excitonic parameters of GaN studied by time-of-flight spectroscopy

AU - Toropov, A. A.

AU - Pozina, G.

AU - Bergman, J. P.

AU - Glazov, M. M.

AU - Gippius, N. A.

AU - Disseix, P.

AU - Leymarie, J.

AU - Gil, B.

AU - Monemar, B.

PY - 2011/9/5

Y1 - 2011/9/5

N2 - We refine excitonic parameters of bulk GaN by means of time-of-flight spectroscopy of light pulses propagating through crystals. The influence of elastic photon scattering is excluded by using the multiple reflections of the pulses from crystal boundaries. The shapes of these reflexes in the time-energy plane depict the variation of the group velocity induced by excitonic resonances. Modeling of the shapes, as well as optical spectra, shows that a homogeneous width of the order of 10 μeV characterizes the exciton-polariton resonances within the crystal. The oscillator strength of A and B exciton-polaritons is determined as 0.0022 and 0.0016, respectively.

AB - We refine excitonic parameters of bulk GaN by means of time-of-flight spectroscopy of light pulses propagating through crystals. The influence of elastic photon scattering is excluded by using the multiple reflections of the pulses from crystal boundaries. The shapes of these reflexes in the time-energy plane depict the variation of the group velocity induced by excitonic resonances. Modeling of the shapes, as well as optical spectra, shows that a homogeneous width of the order of 10 μeV characterizes the exciton-polariton resonances within the crystal. The oscillator strength of A and B exciton-polaritons is determined as 0.0022 and 0.0016, respectively.

UR - http://www.scopus.com/inward/record.url?scp=80052785465&partnerID=8YFLogxK

U2 - 10.1063/1.3625431

DO - 10.1063/1.3625431

M3 - Article

AN - SCOPUS:80052785465

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

M1 - 101108

ER -

ID: 36442900