Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
We study exciton spin decay in the regime of strong electron-hole exchange interaction, which occurs in a wide variety of semiconductor nanostructures. In this regime the electron spin precession is restricted within a sector formed by the external magnetic field and the effective exchange fields triggered by random spin flips of the hole. Using Hanle effect measurements, we demonstrate that this mechanism dominates our experiments in CdTe/(Cd,Mg)Te quantum wells. We present calculations that provide a consistent description of the experimental results, which is supported by independent measurements of the parameters entering the model.
Язык оригинала | английский |
---|---|
Номер статьи | 016601 |
Журнал | Physical Review Letters |
Том | 99 |
Номер выпуска | 1 |
DOI | |
Состояние | Опубликовано - 3 июл 2007 |
ID: 39909715