Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Evolution of carbon film structure during its catalyst-free growth in the plasma of direct current glow discharge. / Krivchenko, V.A.; Dvorkin, V. V.; Dzbanovsky, N. N.; Timofeyev, M. A.; Stepanov, A. S.; Rakhimov, A. T.; Suetin, N. V.; Vilkov, O. Yu; Yashina, L. V.
в: Carbon, Том 50, № 4, 04.2012, стр. 1477-1487.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
}
TY - JOUR
T1 - Evolution of carbon film structure during its catalyst-free growth in the plasma of direct current glow discharge
AU - Krivchenko, V.A.
AU - Dvorkin, V. V.
AU - Dzbanovsky, N. N.
AU - Timofeyev, M. A.
AU - Stepanov, A. S.
AU - Rakhimov, A. T.
AU - Suetin, N. V.
AU - Vilkov, O. Yu
AU - Yashina, L. V.
PY - 2012/4
Y1 - 2012/4
N2 - Catalyst-free growth of nanocrystalline carbon films on silicon substrates under direct current glow discharge in a mixture of hydrogen and methane was studied by scanning and transmission electron microscopy, Raman spectroscopy, as well as X-ray photoelectron and near edge X-ray absorption fine structure spectroscopy (BESSY II, Berlin). The in-time development of the film structure on a carbided silicon substrate includes the formation of diamond-like particles, ultra-thin graphite flakes parallel to the surface, carbon nanowalls nucleated on the stacked flakes and their growth accompanied by a permanent decrease of the structural defect density, and finally nanotube nucleation at the nanowall edges. Based on the observation of the carbon nanotube/nanowall linear size variation in time and using the calculated binding energies and the diffusion thresholds obtained from the literature, we propose that direct attachment of the CH 3 radicals to the carbon nanowall edge is the predominant mechanism and the rate-limiting step of its growth, whereas carbon nanotube growth is controlled by radicals diffusing along its outer surface.
AB - Catalyst-free growth of nanocrystalline carbon films on silicon substrates under direct current glow discharge in a mixture of hydrogen and methane was studied by scanning and transmission electron microscopy, Raman spectroscopy, as well as X-ray photoelectron and near edge X-ray absorption fine structure spectroscopy (BESSY II, Berlin). The in-time development of the film structure on a carbided silicon substrate includes the formation of diamond-like particles, ultra-thin graphite flakes parallel to the surface, carbon nanowalls nucleated on the stacked flakes and their growth accompanied by a permanent decrease of the structural defect density, and finally nanotube nucleation at the nanowall edges. Based on the observation of the carbon nanotube/nanowall linear size variation in time and using the calculated binding energies and the diffusion thresholds obtained from the literature, we propose that direct attachment of the CH 3 radicals to the carbon nanowall edge is the predominant mechanism and the rate-limiting step of its growth, whereas carbon nanotube growth is controlled by radicals diffusing along its outer surface.
UR - http://www.scopus.com/inward/record.url?scp=84855853114&partnerID=8YFLogxK
U2 - 10.1016/j.carbon.2011.11.018
DO - 10.1016/j.carbon.2011.11.018
M3 - Article
AN - SCOPUS:84855853114
VL - 50
SP - 1477
EP - 1487
JO - Carbon
JF - Carbon
SN - 0008-6223
IS - 4
ER -
ID: 35364689