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Erbium-mediated photoconductivity of Ga-Ge-S-Se : Er3+ chalcogenide glasses. / Ivanova, T. Yu; Manshina, A. A.; Povolotskiy, A. V.; Tver'Yanovich, Yu S.; Liaw, Shien Kuei; Hsieh, Yao Shung.

в: Journal of Physics D - Applied Physics, Том 41, № 17, 175110, 07.09.2008.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

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Author

Ivanova, T. Yu ; Manshina, A. A. ; Povolotskiy, A. V. ; Tver'Yanovich, Yu S. ; Liaw, Shien Kuei ; Hsieh, Yao Shung. / Erbium-mediated photoconductivity of Ga-Ge-S-Se : Er3+ chalcogenide glasses. в: Journal of Physics D - Applied Physics. 2008 ; Том 41, № 17.

BibTeX

@article{8658dd9adb264e7f9354f74973bbbe15,
title = "Erbium-mediated photoconductivity of Ga-Ge-S-Se: Er3+ chalcogenide glasses",
abstract = "Photoconductivity mediated by erbium ions in chalcogenide glasses Ga-Ge-S has been found. The conductivity of glasses undoped and doped with erbium has been studied under irradiation by laser light at λ = 813 nm. In both cases the optical band-gap energy exceeds by several times the laser photon energy. It has been observed that the exposure to sub-band-gap light does not change the conductivity of the undoped glass, whereas it leads to a significant increase in the conductivity of the glass doped with erbium. We propose a two-photon mechanism of the photoconductivity in this glass, where erbium accumulates laser energy and then transfers it nonradiatively to the glass matrix (energy backtransfer).",
author = "Ivanova, {T. Yu} and Manshina, {A. A.} and Povolotskiy, {A. V.} and Tver'Yanovich, {Yu S.} and Liaw, {Shien Kuei} and Hsieh, {Yao Shung}",
year = "2008",
month = sep,
day = "7",
doi = "10.1088/0022-3727/41/17/175110",
language = "English",
volume = "41",
journal = "Journal Physics D: Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing Ltd.",
number = "17",

}

RIS

TY - JOUR

T1 - Erbium-mediated photoconductivity of Ga-Ge-S-Se

T2 - Er3+ chalcogenide glasses

AU - Ivanova, T. Yu

AU - Manshina, A. A.

AU - Povolotskiy, A. V.

AU - Tver'Yanovich, Yu S.

AU - Liaw, Shien Kuei

AU - Hsieh, Yao Shung

PY - 2008/9/7

Y1 - 2008/9/7

N2 - Photoconductivity mediated by erbium ions in chalcogenide glasses Ga-Ge-S has been found. The conductivity of glasses undoped and doped with erbium has been studied under irradiation by laser light at λ = 813 nm. In both cases the optical band-gap energy exceeds by several times the laser photon energy. It has been observed that the exposure to sub-band-gap light does not change the conductivity of the undoped glass, whereas it leads to a significant increase in the conductivity of the glass doped with erbium. We propose a two-photon mechanism of the photoconductivity in this glass, where erbium accumulates laser energy and then transfers it nonradiatively to the glass matrix (energy backtransfer).

AB - Photoconductivity mediated by erbium ions in chalcogenide glasses Ga-Ge-S has been found. The conductivity of glasses undoped and doped with erbium has been studied under irradiation by laser light at λ = 813 nm. In both cases the optical band-gap energy exceeds by several times the laser photon energy. It has been observed that the exposure to sub-band-gap light does not change the conductivity of the undoped glass, whereas it leads to a significant increase in the conductivity of the glass doped with erbium. We propose a two-photon mechanism of the photoconductivity in this glass, where erbium accumulates laser energy and then transfers it nonradiatively to the glass matrix (energy backtransfer).

UR - http://www.scopus.com/inward/record.url?scp=54749123642&partnerID=8YFLogxK

U2 - 10.1088/0022-3727/41/17/175110

DO - 10.1088/0022-3727/41/17/175110

M3 - Article

VL - 41

JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

SN - 0022-3727

IS - 17

M1 - 175110

ER -

ID: 5099960