Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Er3+ as glass structure modifier of Ga-Ge-S chalcogenide system. / Povolotskiy, A.; Ivanova, T.; Manshina, A.; Tver'Yanovich, Y.; Liaw, Shien Kuei; Chang, Chu Lin.
в: Applied Physics A: Materials Science and Processing, Том 96, № 4, 09.2009, стр. 887-891.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Er3+ as glass structure modifier of Ga-Ge-S chalcogenide system
AU - Povolotskiy, A.
AU - Ivanova, T.
AU - Manshina, A.
AU - Tver'Yanovich, Y.
AU - Liaw, Shien Kuei
AU - Chang, Chu Lin
PY - 2009/9
Y1 - 2009/9
N2 - Er3+ clustering phenomenon in Ga-Ge-S chalcogenide system is studied using Raman spectroscopy. The Raman spectra from 10 to 500 cm -1 for glasses (100-y)[15Ga2S3-85GeS 2]-yEr2S3 (y=0.08-5.00 mol. %) have been analyzed. To reveal the influence of the chemical composition on the glass structure the intensity of the peak corresponding to Ge-Ge (Ga-Ga) homopolar bonds has been examined. The peak intensity increase with Er2S 3 concentration change in the region 0<C(Er2S 3)<2 mol. % has been interpreted in terms of the sulphur deficiency in the glass resulting in the formation of S3Ge-GeS 3 (S3Ga-GaS3) structural units. The further increase in concentration beyond 2 mol. % reduces the sulphur deficiency, which can be attributed to the formation of the ternary compound Er 3GaS6. The structural units Er3GaS6 contain a large mol. fraction of Er3+ or, in other words, Er 3+ clusters. The data obtained from the low-frequency Raman spectra (boson band) indicate strong variations of the medium-range order (MRO) in the glasses induced by Er3+. The observed behavior of the MRO size (the correlation length) with increasing of Er2S3 concentration provides for additional evidence of the Er3+ clustering.
AB - Er3+ clustering phenomenon in Ga-Ge-S chalcogenide system is studied using Raman spectroscopy. The Raman spectra from 10 to 500 cm -1 for glasses (100-y)[15Ga2S3-85GeS 2]-yEr2S3 (y=0.08-5.00 mol. %) have been analyzed. To reveal the influence of the chemical composition on the glass structure the intensity of the peak corresponding to Ge-Ge (Ga-Ga) homopolar bonds has been examined. The peak intensity increase with Er2S 3 concentration change in the region 0<C(Er2S 3)<2 mol. % has been interpreted in terms of the sulphur deficiency in the glass resulting in the formation of S3Ge-GeS 3 (S3Ga-GaS3) structural units. The further increase in concentration beyond 2 mol. % reduces the sulphur deficiency, which can be attributed to the formation of the ternary compound Er 3GaS6. The structural units Er3GaS6 contain a large mol. fraction of Er3+ or, in other words, Er 3+ clusters. The data obtained from the low-frequency Raman spectra (boson band) indicate strong variations of the medium-range order (MRO) in the glasses induced by Er3+. The observed behavior of the MRO size (the correlation length) with increasing of Er2S3 concentration provides for additional evidence of the Er3+ clustering.
UR - http://www.scopus.com/inward/record.url?scp=70350571125&partnerID=8YFLogxK
U2 - 10.1007/s00339-009-5321-0
DO - 10.1007/s00339-009-5321-0
M3 - Article
AN - SCOPUS:70350571125
VL - 96
SP - 887
EP - 891
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
SN - 0947-8396
IS - 4
ER -
ID: 9367398