Standard

Er3+ as glass structure modifier of Ga-Ge-S chalcogenide system. / Povolotskiy, A.; Ivanova, T.; Manshina, A.; Tver'Yanovich, Y.; Liaw, Shien Kuei; Chang, Chu Lin.

в: Applied Physics A: Materials Science and Processing, Том 96, № 4, 09.2009, стр. 887-891.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

Harvard

Povolotskiy, A, Ivanova, T, Manshina, A, Tver'Yanovich, Y, Liaw, SK & Chang, CL 2009, 'Er3+ as glass structure modifier of Ga-Ge-S chalcogenide system', Applied Physics A: Materials Science and Processing, Том. 96, № 4, стр. 887-891. https://doi.org/10.1007/s00339-009-5321-0

APA

Vancouver

Povolotskiy A, Ivanova T, Manshina A, Tver'Yanovich Y, Liaw SK, Chang CL. Er3+ as glass structure modifier of Ga-Ge-S chalcogenide system. Applied Physics A: Materials Science and Processing. 2009 Сент.;96(4):887-891. https://doi.org/10.1007/s00339-009-5321-0

Author

Povolotskiy, A. ; Ivanova, T. ; Manshina, A. ; Tver'Yanovich, Y. ; Liaw, Shien Kuei ; Chang, Chu Lin. / Er3+ as glass structure modifier of Ga-Ge-S chalcogenide system. в: Applied Physics A: Materials Science and Processing. 2009 ; Том 96, № 4. стр. 887-891.

BibTeX

@article{860c6c09c0c34803953d740a022db6d9,
title = "Er3+ as glass structure modifier of Ga-Ge-S chalcogenide system",
abstract = "Er3+ clustering phenomenon in Ga-Ge-S chalcogenide system is studied using Raman spectroscopy. The Raman spectra from 10 to 500 cm -1 for glasses (100-y)[15Ga2S3-85GeS 2]-yEr2S3 (y=0.08-5.00 mol. %) have been analyzed. To reveal the influence of the chemical composition on the glass structure the intensity of the peak corresponding to Ge-Ge (Ga-Ga) homopolar bonds has been examined. The peak intensity increase with Er2S 3 concentration change in the region 0<C(Er2S 3)<2 mol. % has been interpreted in terms of the sulphur deficiency in the glass resulting in the formation of S3Ge-GeS 3 (S3Ga-GaS3) structural units. The further increase in concentration beyond 2 mol. % reduces the sulphur deficiency, which can be attributed to the formation of the ternary compound Er 3GaS6. The structural units Er3GaS6 contain a large mol. fraction of Er3+ or, in other words, Er 3+ clusters. The data obtained from the low-frequency Raman spectra (boson band) indicate strong variations of the medium-range order (MRO) in the glasses induced by Er3+. The observed behavior of the MRO size (the correlation length) with increasing of Er2S3 concentration provides for additional evidence of the Er3+ clustering.",
author = "A. Povolotskiy and T. Ivanova and A. Manshina and Y. Tver'Yanovich and Liaw, {Shien Kuei} and Chang, {Chu Lin}",
year = "2009",
month = sep,
doi = "10.1007/s00339-009-5321-0",
language = "English",
volume = "96",
pages = "887--891",
journal = "Applied Physics A: Materials Science and Processing",
issn = "0947-8396",
publisher = "Springer Nature",
number = "4",

}

RIS

TY - JOUR

T1 - Er3+ as glass structure modifier of Ga-Ge-S chalcogenide system

AU - Povolotskiy, A.

AU - Ivanova, T.

AU - Manshina, A.

AU - Tver'Yanovich, Y.

AU - Liaw, Shien Kuei

AU - Chang, Chu Lin

PY - 2009/9

Y1 - 2009/9

N2 - Er3+ clustering phenomenon in Ga-Ge-S chalcogenide system is studied using Raman spectroscopy. The Raman spectra from 10 to 500 cm -1 for glasses (100-y)[15Ga2S3-85GeS 2]-yEr2S3 (y=0.08-5.00 mol. %) have been analyzed. To reveal the influence of the chemical composition on the glass structure the intensity of the peak corresponding to Ge-Ge (Ga-Ga) homopolar bonds has been examined. The peak intensity increase with Er2S 3 concentration change in the region 0<C(Er2S 3)<2 mol. % has been interpreted in terms of the sulphur deficiency in the glass resulting in the formation of S3Ge-GeS 3 (S3Ga-GaS3) structural units. The further increase in concentration beyond 2 mol. % reduces the sulphur deficiency, which can be attributed to the formation of the ternary compound Er 3GaS6. The structural units Er3GaS6 contain a large mol. fraction of Er3+ or, in other words, Er 3+ clusters. The data obtained from the low-frequency Raman spectra (boson band) indicate strong variations of the medium-range order (MRO) in the glasses induced by Er3+. The observed behavior of the MRO size (the correlation length) with increasing of Er2S3 concentration provides for additional evidence of the Er3+ clustering.

AB - Er3+ clustering phenomenon in Ga-Ge-S chalcogenide system is studied using Raman spectroscopy. The Raman spectra from 10 to 500 cm -1 for glasses (100-y)[15Ga2S3-85GeS 2]-yEr2S3 (y=0.08-5.00 mol. %) have been analyzed. To reveal the influence of the chemical composition on the glass structure the intensity of the peak corresponding to Ge-Ge (Ga-Ga) homopolar bonds has been examined. The peak intensity increase with Er2S 3 concentration change in the region 0<C(Er2S 3)<2 mol. % has been interpreted in terms of the sulphur deficiency in the glass resulting in the formation of S3Ge-GeS 3 (S3Ga-GaS3) structural units. The further increase in concentration beyond 2 mol. % reduces the sulphur deficiency, which can be attributed to the formation of the ternary compound Er 3GaS6. The structural units Er3GaS6 contain a large mol. fraction of Er3+ or, in other words, Er 3+ clusters. The data obtained from the low-frequency Raman spectra (boson band) indicate strong variations of the medium-range order (MRO) in the glasses induced by Er3+. The observed behavior of the MRO size (the correlation length) with increasing of Er2S3 concentration provides for additional evidence of the Er3+ clustering.

UR - http://www.scopus.com/inward/record.url?scp=70350571125&partnerID=8YFLogxK

U2 - 10.1007/s00339-009-5321-0

DO - 10.1007/s00339-009-5321-0

M3 - Article

AN - SCOPUS:70350571125

VL - 96

SP - 887

EP - 891

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

SN - 0947-8396

IS - 4

ER -

ID: 9367398