Energy spectrum in a shallow GaAs/AlGaAs quantum well probed by spectroscopy of nonradiative broadening of exciton resonances

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Energy spectrum in a shallow GaAs/AlGaAs quantum well probed by spectroscopy of nonradiative broadening of exciton resonances. / Kurdyubov, A. S. ; Gribakin, B. F. ; Mikhailov, A. V. ; Trifonov, A. V. ; Efimov, Yu. P. ; Eliseev, S. A. ; Lovtcius, V. A. ; Ignatiev, I. V. .

в: Semiconductors, Том 54, № 11, 01.11.2020, стр. 1514-1517.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

BibTeX

@article{acef733224134810be8bec3de59e8c6f,

title = "Energy spectrum in a shallow GaAs/AlGaAs quantum well probed by spectroscopy of nonradiative broadening of exciton resonances",

abstract = "The energy spectrum of the exciton and carrier states in a shallow GaAs/AlGaAs quantum well is experimentally studied by means of the spectroscopy of the nonradiative broadening of exciton resonances and the spectroscopy of the photoluminescence excitation. The observed peculiarities of the spectra are treated using the numerical solution of the one-dimensional Schr{\"o}dinger equation for free carriers and three-dimensional equation for excitons in the quantum well. The conduction and valence band offsets in the shallow GaAs quantum well are determined.",

keywords = "exciton spectroscopy, GaAs/AlGaAs quantum well, nonradiative broadening",

author = "Kurdyubov, {A. S.} and Gribakin, {B. F.} and Mikhailov, {A. V.} and Trifonov, {A. V.} and Efimov, {Yu. P.} and Eliseev, {S. A.} and Lovtcius, {V. A.} and Ignatiev, {I. V.}",

note = "Publisher Copyright: {\textcopyright} 2020, Pleiades Publishing, Ltd.",

year = "2020",

month = nov,

day = "1",

doi = "10.1134/S1063782620110172",

language = "English",

volume = "54",

pages = "1514--1517",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "МАИК {"}Наука/Интерпериодика{"}",

number = "11",

}

RIS

TY - JOUR

T1 - Energy spectrum in a shallow GaAs/AlGaAs quantum well probed by spectroscopy of nonradiative broadening of exciton resonances

AU - Kurdyubov, A. S.

AU - Gribakin, B. F.

AU - Mikhailov, A. V.

AU - Trifonov, A. V.

AU - Efimov, Yu. P.

AU - Eliseev, S. A.

AU - Lovtcius, V. A.

AU - Ignatiev, I. V.

PY - 2020/11/1

Y1 - 2020/11/1

N2 - The energy spectrum of the exciton and carrier states in a shallow GaAs/AlGaAs quantum well is experimentally studied by means of the spectroscopy of the nonradiative broadening of exciton resonances and the spectroscopy of the photoluminescence excitation. The observed peculiarities of the spectra are treated using the numerical solution of the one-dimensional Schrödinger equation for free carriers and three-dimensional equation for excitons in the quantum well. The conduction and valence band offsets in the shallow GaAs quantum well are determined.

AB - The energy spectrum of the exciton and carrier states in a shallow GaAs/AlGaAs quantum well is experimentally studied by means of the spectroscopy of the nonradiative broadening of exciton resonances and the spectroscopy of the photoluminescence excitation. The observed peculiarities of the spectra are treated using the numerical solution of the one-dimensional Schrödinger equation for free carriers and three-dimensional equation for excitons in the quantum well. The conduction and valence band offsets in the shallow GaAs quantum well are determined.

KW - exciton spectroscopy

KW - GaAs/AlGaAs quantum well

KW - nonradiative broadening

UR - https://link.springer.com/article/10.1134/S1063782620110172

UR - http://www.scopus.com/inward/record.url?scp=85094877816&partnerID=8YFLogxK

U2 - 10.1134/S1063782620110172

DO - 10.1134/S1063782620110172

M3 - Article

VL - 54

SP - 1514

EP - 1517

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 11

ER -

ID: 70632194