TY - JOUR

T1 - Energy dissipation of heated electrons in silicon dioxide layers

AU - Baraban, A. P.

AU - Bulavinov, V. V.

AU - Rybakov, M. O.

PY - 1991/1/1

Y1 - 1991/1/1

N2 - The field and thickness dependence of the conductivity, charge state, and electroluminescence of Si-SiO2 structures is investigated with the aim of studying the energy-dissipation mechanisms of electrons heated by an electric field in SiO2 films. It is shown that, as well as the previously known dissipation channels (interaction with the phonon subsystem and impact ionization in the SiO2 volume, with characterisic energy losses ε1<0.153 eV and ε2>9 eV, respectively), account must also be taken of processes of defect excitation at the Si-SiO2 boundary, which are accompanied by radiative relaxation in the electroluminescence bands and characterized by "intermediate" energy-loss values (ε1<ε<ε2).

AB - The field and thickness dependence of the conductivity, charge state, and electroluminescence of Si-SiO2 structures is investigated with the aim of studying the energy-dissipation mechanisms of electrons heated by an electric field in SiO2 films. It is shown that, as well as the previously known dissipation channels (interaction with the phonon subsystem and impact ionization in the SiO2 volume, with characterisic energy losses ε1<0.153 eV and ε2>9 eV, respectively), account must also be taken of processes of defect excitation at the Si-SiO2 boundary, which are accompanied by radiative relaxation in the electroluminescence bands and characterized by "intermediate" energy-loss values (ε1<ε<ε2).

UR - http://www.scopus.com/inward/record.url?scp=34249920457&partnerID=8YFLogxK

U2 - 10.1007/BF00914117

DO - 10.1007/BF00914117

M3 - Article

AN - SCOPUS:34249920457

VL - 34

SP - 27

EP - 30

JO - Russian Physics Journal

JF - Russian Physics Journal

SN - 1064-8887

IS - 1

ER -