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Electronic structure of the conduction band of the interface region of ultrathin films of substituted perylenedicarboximides and the germanium oxide surface. / Komolov, A.S.; Lazneva, E.F.; Gerasimova, N.B.; Panina, Y.A.; Baramygin, A.V.; Pshenichnyuk, S.A.

в: Physics of the Solid State, Том 58, № 9, 2016, стр. 1901-1905.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Komolov, AS, Lazneva, EF, Gerasimova, NB, Panina, YA, Baramygin, AV & Pshenichnyuk, SA 2016, 'Electronic structure of the conduction band of the interface region of ultrathin films of substituted perylenedicarboximides and the germanium oxide surface', Physics of the Solid State, Том. 58, № 9, стр. 1901-1905. https://doi.org/10.1134/S1063783416090183

APA

Komolov, A. S., Lazneva, E. F., Gerasimova, N. B., Panina, Y. A., Baramygin, A. V., & Pshenichnyuk, S. A. (2016). Electronic structure of the conduction band of the interface region of ultrathin films of substituted perylenedicarboximides and the germanium oxide surface. Physics of the Solid State, 58(9), 1901-1905. https://doi.org/10.1134/S1063783416090183

Vancouver

Komolov AS, Lazneva EF, Gerasimova NB, Panina YA, Baramygin AV, Pshenichnyuk SA. Electronic structure of the conduction band of the interface region of ultrathin films of substituted perylenedicarboximides and the germanium oxide surface. Physics of the Solid State. 2016;58(9):1901-1905. https://doi.org/10.1134/S1063783416090183

Author

Komolov, A.S. ; Lazneva, E.F. ; Gerasimova, N.B. ; Panina, Y.A. ; Baramygin, A.V. ; Pshenichnyuk, S.A. / Electronic structure of the conduction band of the interface region of ultrathin films of substituted perylenedicarboximides and the germanium oxide surface. в: Physics of the Solid State. 2016 ; Том 58, № 9. стр. 1901-1905.

BibTeX

@article{f6bb1280eed74a4ba4cab503e9e5af03,
title = "Electronic structure of the conduction band of the interface region of ultrathin films of substituted perylenedicarboximides and the germanium oxide surface",
abstract = "{\textcopyright} 2016, Pleiades Publishing, Ltd.The results of the investigation of the electronic structure of the conduction band and the interfacial potential barrier during the formation of interfaces of dioctyl-substituted perylenedicarboximide (PTCDI-C8) and diphenyl-substituted perylenedicarboximide (PTCDI-Ph) ultrathin films with the oxidized germanium surface have been presented. The experimental results have been obtained using the very low energy electron diffraction (VLEED) technique in the total current spectroscopy (TCS) mode at energies in the range from 5 to 20 eV above the Fermi level EF. The positions of the maxima of the fine structure of total current spectra (FSTCS) of the PTCDI-C8 and PTCDI-Ph films differ significantly in the energy range from 9 to 20 eV above the Fermi level EF, which can be associated with the difference between the substituents of the chosen molecules, dioctyl- and diphenyl-, respectively. At the same time, the positions of the lowenergy maxima in the FSTCS spectra at an energy 6–7",
author = "A.S. Komolov and E.F. Lazneva and N.B. Gerasimova and Y.A. Panina and A.V. Baramygin and S.A. Pshenichnyuk",
year = "2016",
doi = "10.1134/S1063783416090183",
language = "English",
volume = "58",
pages = "1901--1905",
journal = "Physics of the Solid State",
issn = "1063-7834",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "9",

}

RIS

TY - JOUR

T1 - Electronic structure of the conduction band of the interface region of ultrathin films of substituted perylenedicarboximides and the germanium oxide surface

AU - Komolov, A.S.

AU - Lazneva, E.F.

AU - Gerasimova, N.B.

AU - Panina, Y.A.

AU - Baramygin, A.V.

AU - Pshenichnyuk, S.A.

PY - 2016

Y1 - 2016

N2 - © 2016, Pleiades Publishing, Ltd.The results of the investigation of the electronic structure of the conduction band and the interfacial potential barrier during the formation of interfaces of dioctyl-substituted perylenedicarboximide (PTCDI-C8) and diphenyl-substituted perylenedicarboximide (PTCDI-Ph) ultrathin films with the oxidized germanium surface have been presented. The experimental results have been obtained using the very low energy electron diffraction (VLEED) technique in the total current spectroscopy (TCS) mode at energies in the range from 5 to 20 eV above the Fermi level EF. The positions of the maxima of the fine structure of total current spectra (FSTCS) of the PTCDI-C8 and PTCDI-Ph films differ significantly in the energy range from 9 to 20 eV above the Fermi level EF, which can be associated with the difference between the substituents of the chosen molecules, dioctyl- and diphenyl-, respectively. At the same time, the positions of the lowenergy maxima in the FSTCS spectra at an energy 6–7

AB - © 2016, Pleiades Publishing, Ltd.The results of the investigation of the electronic structure of the conduction band and the interfacial potential barrier during the formation of interfaces of dioctyl-substituted perylenedicarboximide (PTCDI-C8) and diphenyl-substituted perylenedicarboximide (PTCDI-Ph) ultrathin films with the oxidized germanium surface have been presented. The experimental results have been obtained using the very low energy electron diffraction (VLEED) technique in the total current spectroscopy (TCS) mode at energies in the range from 5 to 20 eV above the Fermi level EF. The positions of the maxima of the fine structure of total current spectra (FSTCS) of the PTCDI-C8 and PTCDI-Ph films differ significantly in the energy range from 9 to 20 eV above the Fermi level EF, which can be associated with the difference between the substituents of the chosen molecules, dioctyl- and diphenyl-, respectively. At the same time, the positions of the lowenergy maxima in the FSTCS spectra at an energy 6–7

U2 - 10.1134/S1063783416090183

DO - 10.1134/S1063783416090183

M3 - Article

VL - 58

SP - 1901

EP - 1905

JO - Physics of the Solid State

JF - Physics of the Solid State

SN - 1063-7834

IS - 9

ER -

ID: 7949981