Electronic Structure of Magnetic Topological Insulators Mn(Bi1 –xSb x)2Te4 with Various Concentration of Sb Atoms

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Electronic Structure of Magnetic Topological Insulators Mn(Bi_{1 –}_xSb_x)₂Te₄ with Various Concentration of Sb Atoms. / Glazkova, D. A.; Estyunin, D. A.; Klimovskikh, I. I.; Makarova, T. P.; Tereshchenko, O. E.; Kokh, K. A.; Golyashov, V. A.; Koroleva, A. V.; Shikin, A. M.

в: JETP Letters, Том 115, № 5, 01.03.2022, стр. 286-291.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

BibTeX

@article{558d3d4e06ce4ffa881f359e5ca7747a,

title = "Electronic Structure of Magnetic Topological Insulators Mn(Bi1 –xSb x)2Te4 with Various Concentration of Sb Atoms",

abstract = "Intrinsic magnetic topological insulator MnBi2Te4 provides a promising platform to implement the quantum anomalous Hall effect at increased temperatures and other unique topological effects. However, to do this, the energy gap opening at the Dirac point should be located at the Fermi level. One of the widely used methods to shift the Dirac point toward the Fermi level is the partial substitution of Bi atoms for Sb atoms. In this work, the electronic structure of the core levels and valence band of Mn(Bi1 –xSbx)2Te4 compounds with various concentration x of Sb atoms from 0 to 1 has been studied. It has been shown that the Dirac point with an increase in the concentration of Sb atoms is shifted toward the Fermi level and becomes localized at it when x ≈ 0.3. In this case, the “rigid” shift of the valence band, including the Mn 3d level, has been observed without changes in the structure of the valence and conduction bands. The concentration dependence of the shift of the Dirac point is approximated by a square root function, which corresponds to a linear increase in the charge carrier density.",

author = "Glazkova, {D. A.} and Estyunin, {D. A.} and Klimovskikh, {I. I.} and Makarova, {T. P.} and Tereshchenko, {O. E.} and Kokh, {K. A.} and Golyashov, {V. A.} and Koroleva, {A. V.} and Shikin, {A. M.}",

note = "Publisher Copyright: {\textcopyright} 2022, Pleiades Publishing, Inc.",

year = "2022",

month = mar,

day = "1",

doi = "10.1134/S0021364022100083",

language = "English",

volume = "115",

pages = "286--291",

journal = "JETP Letters",

issn = "0021-3640",

publisher = "МАИК {"}Наука/Интерпериодика{"}",

number = "5",

}

RIS

TY - JOUR

T1 - Electronic Structure of Magnetic Topological Insulators Mn(Bi1 –xSb x)2Te4 with Various Concentration of Sb Atoms

AU - Glazkova, D. A.

AU - Estyunin, D. A.

AU - Klimovskikh, I. I.

AU - Makarova, T. P.

AU - Tereshchenko, O. E.

AU - Kokh, K. A.

AU - Golyashov, V. A.

AU - Koroleva, A. V.

AU - Shikin, A. M.

PY - 2022/3/1

Y1 - 2022/3/1

N2 - Intrinsic magnetic topological insulator MnBi2Te4 provides a promising platform to implement the quantum anomalous Hall effect at increased temperatures and other unique topological effects. However, to do this, the energy gap opening at the Dirac point should be located at the Fermi level. One of the widely used methods to shift the Dirac point toward the Fermi level is the partial substitution of Bi atoms for Sb atoms. In this work, the electronic structure of the core levels and valence band of Mn(Bi1 –xSbx)2Te4 compounds with various concentration x of Sb atoms from 0 to 1 has been studied. It has been shown that the Dirac point with an increase in the concentration of Sb atoms is shifted toward the Fermi level and becomes localized at it when x ≈ 0.3. In this case, the “rigid” shift of the valence band, including the Mn 3d level, has been observed without changes in the structure of the valence and conduction bands. The concentration dependence of the shift of the Dirac point is approximated by a square root function, which corresponds to a linear increase in the charge carrier density.

AB - Intrinsic magnetic topological insulator MnBi2Te4 provides a promising platform to implement the quantum anomalous Hall effect at increased temperatures and other unique topological effects. However, to do this, the energy gap opening at the Dirac point should be located at the Fermi level. One of the widely used methods to shift the Dirac point toward the Fermi level is the partial substitution of Bi atoms for Sb atoms. In this work, the electronic structure of the core levels and valence band of Mn(Bi1 –xSbx)2Te4 compounds with various concentration x of Sb atoms from 0 to 1 has been studied. It has been shown that the Dirac point with an increase in the concentration of Sb atoms is shifted toward the Fermi level and becomes localized at it when x ≈ 0.3. In this case, the “rigid” shift of the valence band, including the Mn 3d level, has been observed without changes in the structure of the valence and conduction bands. The concentration dependence of the shift of the Dirac point is approximated by a square root function, which corresponds to a linear increase in the charge carrier density.

UR - http://www.scopus.com/inward/record.url?scp=85132608641&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/d8bcd3a3-ff05-3e15-ad79-6a2c3357b741/

U2 - 10.1134/S0021364022100083

DO - 10.1134/S0021364022100083

M3 - Article

AN - SCOPUS:85132608641

VL - 115

SP - 286

EP - 291

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 5

ER -

ID: 97283904