Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Electronic States of the Conduction Band of Ultrathin Furan-Phenylene Co-Oligomer Films on the Surfaces of Oxidized Silicon and Layer-by-Layer Grown Zinc Oxide. / Комолов, Алексей Сергеевич; Pronin, I. A.; Лазнева, Элеонора Федоровна; Соболев, Виталий Сергеевич; Дубов, Евгений Андреевич; Комолова, Аделина Алексеевна; Zhizhin, E. V.; Пудиков, Дмитрий Александрович; Pshenichnyuk, S. A.; Becker, Ch. S.; Kazantsev, M. S.; Akbarova, F. Dj.; Sharopov, U. B.
в: Crystallography Reports, Том 69, № 4, 01.08.2024, стр. 556–560.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Electronic States of the Conduction Band of Ultrathin Furan-Phenylene Co-Oligomer Films on the Surfaces of Oxidized Silicon and Layer-by-Layer Grown Zinc Oxide
AU - Комолов, Алексей Сергеевич
AU - Pronin, I. A.
AU - Лазнева, Элеонора Федоровна
AU - Соболев, Виталий Сергеевич
AU - Дубов, Евгений Андреевич
AU - Комолова, Аделина Алексеевна
AU - Zhizhin, E. V.
AU - Пудиков, Дмитрий Александрович
AU - Pshenichnyuk, S. A.
AU - Becker, Ch. S.
AU - Kazantsev, M. S.
AU - Akbarova, F. Dj.
AU - Sharopov, U. B.
PY - 2024/8/1
Y1 - 2024/8/1
N2 - The results of studying the electronic states of the conduction band of ultrathin films of furan-phenylene co-oligomer 1,4-bis(5-phenylfuran-2-yl)benzene and the results of analyzing the interfacialpotential barrier upon the formation of these films on the surfaces of (SiO2)n-Si and layer-by-layer depositedZnO are presented. The formation of a (8–10)-nm-thick co-oligomer film was investigated by total currentspectroscopy; the energy range from 5 to 20 eV above EF was analyzed. Furan-phenylene co-oligomer filmson the (SiO2)n-Si surface have a domain structure with a characteristic domain size of ~1 × 1 μm and surfaceroughness within a domain of no more than 1 nm. The films on the ZnO surface have a granular structurewith a grain height of 40–50 nm.
AB - The results of studying the electronic states of the conduction band of ultrathin films of furan-phenylene co-oligomer 1,4-bis(5-phenylfuran-2-yl)benzene and the results of analyzing the interfacialpotential barrier upon the formation of these films on the surfaces of (SiO2)n-Si and layer-by-layer depositedZnO are presented. The formation of a (8–10)-nm-thick co-oligomer film was investigated by total currentspectroscopy; the energy range from 5 to 20 eV above EF was analyzed. Furan-phenylene co-oligomer filmson the (SiO2)n-Si surface have a domain structure with a characteristic domain size of ~1 × 1 μm and surfaceroughness within a domain of no more than 1 nm. The films on the ZnO surface have a granular structurewith a grain height of 40–50 nm.
UR - https://www.mendeley.com/catalogue/3d57d19e-670a-324d-89b5-a23ec1883227/
U2 - 10.1134/s1063774524601266
DO - 10.1134/s1063774524601266
M3 - Article
VL - 69
SP - 556
EP - 560
JO - Crystallography Reports
JF - Crystallography Reports
SN - 1063-7745
IS - 4
ER -
ID: 122639244