Standard

Electronic Properties of Binary and Mixed [RMNH]n (R=H,CH3, M=Al,Ga,In) Oligomers. / Oranskaya, A A; Pomogaeva, A V; Timoshkin, A Y.

2014. Реферат от 4th International Congress in Advances in Applied Physics and Materials Science (AP-MAS 2014), Fethiye, Турция.

Результаты исследований: Материалы конференцийтезисы

Harvard

Oranskaya, AA, Pomogaeva, AV & Timoshkin, AY 2014, 'Electronic Properties of Binary and Mixed [RMNH]n (R=H,CH3, M=Al,Ga,In) Oligomers', 4th International Congress in Advances in Applied Physics and Materials Science (AP-MAS 2014), Fethiye, Турция, 24/04/14 - 27/04/14.

APA

Oranskaya, A. A., Pomogaeva, A. V., & Timoshkin, A. Y. (2014). Electronic Properties of Binary and Mixed [RMNH]n (R=H,CH3, M=Al,Ga,In) Oligomers. Реферат от 4th International Congress in Advances in Applied Physics and Materials Science (AP-MAS 2014), Fethiye, Турция.

Vancouver

Oranskaya AA, Pomogaeva AV, Timoshkin AY. Electronic Properties of Binary and Mixed [RMNH]n (R=H,CH3, M=Al,Ga,In) Oligomers. 2014. Реферат от 4th International Congress in Advances in Applied Physics and Materials Science (AP-MAS 2014), Fethiye, Турция.

Author

Oranskaya, A A ; Pomogaeva, A V ; Timoshkin, A Y. / Electronic Properties of Binary and Mixed [RMNH]n (R=H,CH3, M=Al,Ga,In) Oligomers. Реферат от 4th International Congress in Advances in Applied Physics and Materials Science (AP-MAS 2014), Fethiye, Турция.

BibTeX

@conference{4c07cb5d463f439c9f198e23b9396603,
title = "Electronic Properties of Binary and Mixed [RMNH]n (R=H,CH3, M=Al,Ga,In) Oligomers",
author = "Oranskaya, {A A} and Pomogaeva, {A V} and Timoshkin, {A Y}",
year = "2014",
language = "не определен",
note = "null ; Conference date: 24-04-2014 Through 27-04-2014",
url = "http://apmas2014.org ",

}

RIS

TY - CONF

T1 - Electronic Properties of Binary and Mixed [RMNH]n (R=H,CH3, M=Al,Ga,In) Oligomers

AU - Oranskaya, A A

AU - Pomogaeva, A V

AU - Timoshkin, A Y

PY - 2014

Y1 - 2014

M3 - тезисы

Y2 - 24 April 2014 through 27 April 2014

ER -

ID: 6829464