Standard

Electronic and spin structure of the topological insulator Bi2Te2.4Se0.6. / Shikin, A. M.; Klimovskikh, I. I.; Eremeev, S. V.; Rybkina, A. A.; Rusinova, M. V.; Rybkin, A. G.; Zhizhin, E. V.; Sanchez-Barriga, J.; Varykhalov, A.; Rusinov, I. P.; Chulkov, E. V.; Kokh, K. A.; Golyashov, V. A.; Kamyshlov, V.; Tereshchenko, O. E.

в: Physical Review B - Condensed Matter and Materials Physics, Том 89, № 12, 125416, 12.03.2014.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Shikin, AM, Klimovskikh, II, Eremeev, SV, Rybkina, AA, Rusinova, MV, Rybkin, AG, Zhizhin, EV, Sanchez-Barriga, J, Varykhalov, A, Rusinov, IP, Chulkov, EV, Kokh, KA, Golyashov, VA, Kamyshlov, V & Tereshchenko, OE 2014, 'Electronic and spin structure of the topological insulator Bi2Te2.4Se0.6', Physical Review B - Condensed Matter and Materials Physics, Том. 89, № 12, 125416. https://doi.org/10.1103/PhysRevB.89.125416, https://doi.org/10.1103/PhysRevB.89.125416

APA

Shikin, A. M., Klimovskikh, I. I., Eremeev, S. V., Rybkina, A. A., Rusinova, M. V., Rybkin, A. G., Zhizhin, E. V., Sanchez-Barriga, J., Varykhalov, A., Rusinov, I. P., Chulkov, E. V., Kokh, K. A., Golyashov, V. A., Kamyshlov, V., & Tereshchenko, O. E. (2014). Electronic and spin structure of the topological insulator Bi2Te2.4Se0.6. Physical Review B - Condensed Matter and Materials Physics, 89(12), [125416]. https://doi.org/10.1103/PhysRevB.89.125416, https://doi.org/10.1103/PhysRevB.89.125416

Vancouver

Shikin AM, Klimovskikh II, Eremeev SV, Rybkina AA, Rusinova MV, Rybkin AG и пр. Electronic and spin structure of the topological insulator Bi2Te2.4Se0.6. Physical Review B - Condensed Matter and Materials Physics. 2014 Март 12;89(12). 125416. https://doi.org/10.1103/PhysRevB.89.125416, https://doi.org/10.1103/PhysRevB.89.125416

Author

Shikin, A. M. ; Klimovskikh, I. I. ; Eremeev, S. V. ; Rybkina, A. A. ; Rusinova, M. V. ; Rybkin, A. G. ; Zhizhin, E. V. ; Sanchez-Barriga, J. ; Varykhalov, A. ; Rusinov, I. P. ; Chulkov, E. V. ; Kokh, K. A. ; Golyashov, V. A. ; Kamyshlov, V. ; Tereshchenko, O. E. / Electronic and spin structure of the topological insulator Bi2Te2.4Se0.6. в: Physical Review B - Condensed Matter and Materials Physics. 2014 ; Том 89, № 12.

BibTeX

@article{e9f16c6d76b946e1ba34ffcb85ec0491,
title = "Electronic and spin structure of the topological insulator Bi2Te2.4Se0.6",
abstract = "High-resolution spin-and angle-resolved photoemission spectroscopy measurements were performed on the three-dimensional topological insulator Bi2Te2.4Se0.6, which is characterized by enhanced thermoelectric properties. The Fermi level position is found to be located in the bulk energy gap independent of temperature and it is stable over a long time. Spin textures in the Dirac-cone state at energies above and below the Dirac point as well as in the Rashba-type valence band surface state are observed in agreement with theoretical prediction. The calculations of the surface electronic structure demonstrate that the fractional stoichiometry induced disorder within the Te/Se sublattice does not influence the Dirac-cone state dispersion. In spite of relatively high resistivity, temperature dependence of conductivity shows a weak metallic behavior that could explain the effective thermoelectric properties of the Bi2Te2.4Se0.6 compound with the in-plane Seebeck coefficient reaching -330 mu V/K at room temperature.",
keywords = "STATES, PSEUDOPOTENTIALS, SURFACE",
author = "Shikin, {A. M.} and Klimovskikh, {I. I.} and Eremeev, {S. V.} and Rybkina, {A. A.} and Rusinova, {M. V.} and Rybkin, {A. G.} and Zhizhin, {E. V.} and J. Sanchez-Barriga and A. Varykhalov and Rusinov, {I. P.} and Chulkov, {E. V.} and Kokh, {K. A.} and Golyashov, {V. A.} and V. Kamyshlov and Tereshchenko, {O. E.}",
year = "2014",
month = mar,
day = "12",
doi = "10.1103/PhysRevB.89.125416",
language = "Английский",
volume = "89",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "12",

}

RIS

TY - JOUR

T1 - Electronic and spin structure of the topological insulator Bi2Te2.4Se0.6

AU - Shikin, A. M.

AU - Klimovskikh, I. I.

AU - Eremeev, S. V.

AU - Rybkina, A. A.

AU - Rusinova, M. V.

AU - Rybkin, A. G.

AU - Zhizhin, E. V.

AU - Sanchez-Barriga, J.

AU - Varykhalov, A.

AU - Rusinov, I. P.

AU - Chulkov, E. V.

AU - Kokh, K. A.

AU - Golyashov, V. A.

AU - Kamyshlov, V.

AU - Tereshchenko, O. E.

PY - 2014/3/12

Y1 - 2014/3/12

N2 - High-resolution spin-and angle-resolved photoemission spectroscopy measurements were performed on the three-dimensional topological insulator Bi2Te2.4Se0.6, which is characterized by enhanced thermoelectric properties. The Fermi level position is found to be located in the bulk energy gap independent of temperature and it is stable over a long time. Spin textures in the Dirac-cone state at energies above and below the Dirac point as well as in the Rashba-type valence band surface state are observed in agreement with theoretical prediction. The calculations of the surface electronic structure demonstrate that the fractional stoichiometry induced disorder within the Te/Se sublattice does not influence the Dirac-cone state dispersion. In spite of relatively high resistivity, temperature dependence of conductivity shows a weak metallic behavior that could explain the effective thermoelectric properties of the Bi2Te2.4Se0.6 compound with the in-plane Seebeck coefficient reaching -330 mu V/K at room temperature.

AB - High-resolution spin-and angle-resolved photoemission spectroscopy measurements were performed on the three-dimensional topological insulator Bi2Te2.4Se0.6, which is characterized by enhanced thermoelectric properties. The Fermi level position is found to be located in the bulk energy gap independent of temperature and it is stable over a long time. Spin textures in the Dirac-cone state at energies above and below the Dirac point as well as in the Rashba-type valence band surface state are observed in agreement with theoretical prediction. The calculations of the surface electronic structure demonstrate that the fractional stoichiometry induced disorder within the Te/Se sublattice does not influence the Dirac-cone state dispersion. In spite of relatively high resistivity, temperature dependence of conductivity shows a weak metallic behavior that could explain the effective thermoelectric properties of the Bi2Te2.4Se0.6 compound with the in-plane Seebeck coefficient reaching -330 mu V/K at room temperature.

KW - STATES

KW - PSEUDOPOTENTIALS

KW - SURFACE

U2 - 10.1103/PhysRevB.89.125416

DO - 10.1103/PhysRevB.89.125416

M3 - статья

VL - 89

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 12

M1 - 125416

ER -

ID: 6999048