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Electron-electron scattering effect on spin relaxation in multi-valley nanostructures. / Glazov, M. M.; Ivchenko, E. L.

в: EPL, Том 87, № 5, 57005, 27.10.2009.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Glazov, MM & Ivchenko, EL 2009, 'Electron-electron scattering effect on spin relaxation in multi-valley nanostructures', EPL, Том. 87, № 5, 57005. https://doi.org/10.1209/0295-5075/87/57005

APA

Glazov, M. M., & Ivchenko, E. L. (2009). Electron-electron scattering effect on spin relaxation in multi-valley nanostructures. EPL, 87(5), [57005]. https://doi.org/10.1209/0295-5075/87/57005

Vancouver

Glazov MM, Ivchenko EL. Electron-electron scattering effect on spin relaxation in multi-valley nanostructures. EPL. 2009 Окт. 27;87(5). 57005. https://doi.org/10.1209/0295-5075/87/57005

Author

Glazov, M. M. ; Ivchenko, E. L. / Electron-electron scattering effect on spin relaxation in multi-valley nanostructures. в: EPL. 2009 ; Том 87, № 5.

BibTeX

@article{923a808819b2406090d7adcdb51096da,
title = "Electron-electron scattering effect on spin relaxation in multi-valley nanostructures",
abstract = "We develop a theory of effects of electron-electron collisions on the Dyakonov-Perel' spin relaxation in multi-valley quantum wells. It is shown that the electron-electron scattering rate which governs the spin relaxation is different from that in a single-valley system. The theory is applied to Si/SiGe (001)-grown quantum wells where two valleys are simultaneously populated by free carriers. The dependences of the spin relaxation rate on temperature, electron concentration and valley-orbit splitting are calculated and discussed. We demonstrate that in a wide range of temperatures the electron-electron collisions can govern spin relaxation in high-quality Si/SiGe quantum wells.",
author = "Glazov, {M. M.} and Ivchenko, {E. L.}",
year = "2009",
month = oct,
day = "27",
doi = "10.1209/0295-5075/87/57005",
language = "English",
volume = "87",
journal = "Lettere Al Nuovo Cimento",
issn = "0295-5075",
publisher = "IOP Publishing Ltd.",
number = "5",

}

RIS

TY - JOUR

T1 - Electron-electron scattering effect on spin relaxation in multi-valley nanostructures

AU - Glazov, M. M.

AU - Ivchenko, E. L.

PY - 2009/10/27

Y1 - 2009/10/27

N2 - We develop a theory of effects of electron-electron collisions on the Dyakonov-Perel' spin relaxation in multi-valley quantum wells. It is shown that the electron-electron scattering rate which governs the spin relaxation is different from that in a single-valley system. The theory is applied to Si/SiGe (001)-grown quantum wells where two valleys are simultaneously populated by free carriers. The dependences of the spin relaxation rate on temperature, electron concentration and valley-orbit splitting are calculated and discussed. We demonstrate that in a wide range of temperatures the electron-electron collisions can govern spin relaxation in high-quality Si/SiGe quantum wells.

AB - We develop a theory of effects of electron-electron collisions on the Dyakonov-Perel' spin relaxation in multi-valley quantum wells. It is shown that the electron-electron scattering rate which governs the spin relaxation is different from that in a single-valley system. The theory is applied to Si/SiGe (001)-grown quantum wells where two valleys are simultaneously populated by free carriers. The dependences of the spin relaxation rate on temperature, electron concentration and valley-orbit splitting are calculated and discussed. We demonstrate that in a wide range of temperatures the electron-electron collisions can govern spin relaxation in high-quality Si/SiGe quantum wells.

UR - http://www.scopus.com/inward/record.url?scp=77955070295&partnerID=8YFLogxK

U2 - 10.1209/0295-5075/87/57005

DO - 10.1209/0295-5075/87/57005

M3 - Article

AN - SCOPUS:77955070295

VL - 87

JO - Lettere Al Nuovo Cimento

JF - Lettere Al Nuovo Cimento

SN - 0295-5075

IS - 5

M1 - 57005

ER -

ID: 36466379